Semiconductor device and manufacturing method

Abstract

The invention provides a semiconductor device and a manufacturing method therefor. The method comprises the steps: providing a substrate, wherein the substrate comprises a region where metal silicideneeds to be formed, and a region where no metal silicide needs to be formed, and the where metal silicide needs to be formed comprises an NMOS device region and a PMOS device region; forming a gap wall material layer covering the surface of the substrate; etching the gap wall material layer of the PMOS device region, so as to expose a position where embedded-type SiGe needs to be formed; taking the gap wall material layer as a mask to etch the substrate, so as to form a trench where a SiGe layer grows; growing the SiGe layer in the trench; removing the gap wall material layer of the NMOS device region; taking the gap wall material layer in the region where no metal silicide needs to be formed as a metal silicide blocking layer, and executing the metal silicide technology in the NMOS deviceregion and the PMOS device region. According to the invention, the manufacturing method can simplify the technological flow, and reduce the production cost.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Embedded silicon germanium source-drain technology (embedded SiGe, eSiGe) is a strained silicon technology used to improve the performance of PMOS. It increases the hole mobility of PMOS by generating uniaxial compressive stress in the channel, thereby improving the current driving capability of the transistor, and is the core technology in the high-performance process of the 45nm and below technology generation. The principle is to etch a trench on Si as the source-drain region, and selectively epitaxially grow a SiGe layer in the trench, using the mismatch between the SiGe lattice constant and Si, so that the Si along the channel direction is compressed to generate pressure. stress, thereby increasing the hole mobility in the channel Si. Generally, after forming the SiGe layer and ...

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Problems solved by technology

In the existing process, in order to form the metal silicide barrier layer, the insulating layer must

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