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Temperature prediction method for igbt module with ntc thermistor

A technology of thermistor and prediction method, which is applied in the direction of thermometers, thermometers, and heat measurement of electric/magnetic components that are directly sensitive to heat, and can solve the problem of IGBT module overtemperature protection deviation, damage to IGBT modules, and affect IGBT module equipment. normal operation etc.

Active Publication Date: 2019-06-14
SHANGHAI DAJUN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical applications, due to the difference in the setting position of the NTC thermistor on the IGBT module, there is a certain error between the detected temperature and the actual operating temperature of the IGBT module. There is a certain hysteresis in the temperature detection of the IGBT module, which leads to deviations in the over-temperature protection of the IGBT module, which affects the normal operation of the IGBT module equipment, and may damage the IGBT module in severe cases.

Method used

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  • Temperature prediction method for igbt module with ntc thermistor
  • Temperature prediction method for igbt module with ntc thermistor
  • Temperature prediction method for igbt module with ntc thermistor

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Embodiment Construction

[0018] Example figure 1 Shown, the temperature prediction method of the IGBT module of band NTC thermistor of the present invention comprises the steps:

[0019] Step 1. Detect the current operating current I of the IGBT module 1 through the current sensor, the unit is ampere (A);

[0020] Step 2. Calculate the current loss of IGBT module 1 according to the operating current I through the following formula , in watts (W),

[0021]

[0022] Among them: a, b, c are the coefficients determined by the parameters of the IGBT module, a represents the conduction loss of the internal resistance of the IGBT module, and its value is equal to , b represents the loss caused by the conduction voltage drop of the IGBT module, and its value is equal to , c represents the switching loss of the IGBT module, and its value is equal to ; the current loss computed without any correction The deviation from the measured loss is less than 10%;

[0023] in:

[0024] Calculate the modu...

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Abstract

The invention discloses a temperature prediction method of an IGBT module with an NTC thermistor. The method includes the following steps that: the present operating current I of the IGBT module is detected through a current sensor; the current loss PLOSSER of the IGBT module is calculated on the basis of the operating current I through a formula; temperature difference Tth-jnt between the NTC thermistor and the IGBT module chip is obtained through conversion on the basis of the current loss; and the predicted temperature Tj of the IGBT module is obtained according to the sum of the temperature difference Tth-jnt and the current temperature Tht of the IGBT module detected by the NTC thermistor. With the method of the invention adopted, the defect of traditional IGBT module over-temperatureprotection can be eliminated; the operating temperature of the IGBT module can be obtained accurately; and therefore, the more accurate over-temperature protection of the IGBT module can be realized,and the normal operation of a device provided with the IGBT module can be ensured.

Description

technical field [0001] The invention relates to a temperature prediction method of an IGBT module with an NTC thermistor. Background technique [0002] The IGBT module is a semiconductor module packaged by insulated gate bipolar transistor and freewheeling diode through a specific circuit bridge. The packaged IGBT module is directly applied to inverters, UPS uninterruptible power supplies and other equipment; the operating temperature of the IGBT module It is a very important parameter, which is related to the normal operation of the equipment. Such as figure 1 As shown, the IGBT module 1 is usually composed of six bridge-connected insulated gate bipolar transistors 11 and an NTC thermistor 12. The operating temperature of the IGBT module 1 is detected in real time through the NTC thermistor 12 to realize the overtemperature of the IGBT module 1. Protect. However, in practical applications, due to the difference in the setting position of the NTC thermistor on the IGBT mo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K7/22
CPCG01K7/22
Inventor 鲍建波曾侃
Owner SHANGHAI DAJUN TECH
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