Method for improving stability of indium gallium zinc oxide (IGZO) thin film transistor
A thin film transistor and stability technology, which is applied in the field of improving the stability of IGZO thin film transistors, can solve the problems of negative threshold voltage, negative threshold voltage drift, failure of IGZO thin film transistors, etc., so as to improve stability and prevent serious negative bias. , the effect of eliminating the influence of electricity
Inactive Publication Date: 2018-04-20
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Problems solved by technology
[0003] In order to solve the above technical problems, the present invention provides a method for improving the stability of IGZO thin film transistors, which can improve the effect of the passivation layer on the IGZO thin film transistors to block water vapor, solve the problem of negative drift of the threshold voltage of IGZO thin film transistors, and avoid threshold voltage Seriously negatively biased, leading to failure of IGZO thin film transistors
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[0041] The present invention provides a method for improving the stability of IGZO thin film transistors, such as Figure 5 As shown, the method includes the following steps:
[0042] Forming an IGZO thin film transistor 2 on the substrate 1;
[0043] A passivation layer is formed on the IGZO thin film transistor 2; specifically, the passivation layer is located above the substrate 1, and the passivation layer covers the IGZO thin film transistor 2;
[0044] Hydrophobizing treatment is performed on the passivation layer to form hydrophobic groups 4 on the passivation layer.
[0045] Further, forming an IGZO thin film transistor 2 on the substrate 1 includes the following steps:
[0046] forming a gate 21 on the substrate 1;
[0047] forming a gate insulating layer 22 on the substrate 1, and the gate insulating layer 22 covers the gate 21;
[0048] An IGZO film 23 , a source 25 and a drain 24 are formed on the gate insulating layer 22 , and the source 25 and the drain 24 pa...
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The invention provides a method for improving stability of an indium gallium zinc oxide (IGZO) thin film transistor. The method comprises the following steps of forming the IGZO thin film transistor on a substrate; forming a passivation layer on the IGZO thin film transistor; and performing hydrophobization on the passivation layer to form a hydrophobic group on the passivation layer. According tothe method for improving the stability of the IGZO thin film transistor, provided by the invention, the effect of blocking moisture by the passivation of the IGZO thin film transistor can be improved, the problem of negative drift of a threshold voltage of the IGZO thin film transistor is solved, and the threshold voltage is prevented from being seriously and negatively biased to cause failure ofthe IGZO thin film transistor.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a method for improving the stability of an IGZO thin film transistor. Background technique [0002] figure 1 Shown is a BCE (Back Channel Etched, back channel etching type) type IGZO (indium gallium zinc oxide, indium gallium zinc oxide) thin film transistor (TFT, Thin Film Transistor), the IGZO thin film transistor 2 includes a substrate 1 The gate 21, the gate insulating layer 22, the IGZO film 23, the source 25 and the drain 24; the IGZO thin film transistor 2 is easy to form a depletion type thin film transistor, that is, the threshold voltage Vth is a negative value. Moreover, the IGZO thin film transistor 2 is particularly sensitive to reclaimed water in the environment. If the back channel of the IGZO thin film transistor is infiltrated by water vapor, the threshold voltage Vth will be severely negatively biased, resulting in failure of the IGZO thin film transistor 2 ....
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IPC IPC(8): H01L21/56H01L21/34
CPCH01L21/56H01L29/66969H01L21/3105H01L21/31116H01L23/3171H01L23/3192H01L29/7869H01L21/02164
Inventor 石龙强
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD