Semiconductor structure and method of manufacturing the same
A semiconductor and silicon layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as hindering performance progress
Inactive Publication Date: 2018-05-25
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, the integration of smaller size dies (e.g., 6 inches or 8 inches) onto larger size dies (e.g., 12 inches) and the thermal dissipation of this silicon-based III-V structure have hindered the progress of the performance of the present devices
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[0014] In the drawings, like reference numerals are used to indicate like or analogous elements throughout the various views and to show and describe illustrative embodiments of embodiments of the invention. The drawings are not necessarily drawn to scale and in some instances have been exaggerated and / or simplified in certain locations for illustrative purposes only. Those of ordinary skill in the art will appreciate many possible applications and variations of the following illustrative embodiments based on the embodiments of the present invention.
[0015] Further, for ease of description, spatial relational terms (such as "below", "below", "under", "above", "upper" and the like) may be used herein to describe the relationship between one element or component and another ( The relationship between some) elements or components, as shown in the figure. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition ...
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The disclosure relates to a semiconductor structure and a method of manufacturing the same. Specifically, the present disclosure provides a semiconductor structure, including a first silicon layer having a through silicon via (TSV), a III-V structure over the first silicon layer, electrically coupling to the TSV, and a redistribution layer (RDL) under the first silicon layer, electrically couplingto the TSV. The present disclosure also provides a method of manufacturing a semiconductor device. The method includes providing a III-V-on-Si structure, comprising a III-V device over a silicon layer, forming a through silicon via (TSV) in the silicon layer, electrically coupling to the III-V device, and forming a redistribution layer (RDL) over a side of the silicon layer opposite to the III-Vdevice.
Description
technical field [0001] The present disclosure relates to a silicon-based III-V semiconductor structure and a fabrication method thereof. Background technique [0002] In semiconductor technology, due to their properties, III-V-V materials such as gallium nitride (GaN) are used to form various integrated circuits such as high-power field-effect transistors, high-frequency transistors or light-emitting diodes (LED). Typically, GaN is formed on a substrate such as a sapphire substrate or a silicon carbide substrate with a specific lattice mismatch. These substrates are expensive in terms of materials and / or manufacturing. Since GaN-on-silicon is an ideal structure (with reduced cost) for high power devices or LEDs, it is desirable to grow GaN on silicon substrates. However, the integration on smaller size wafers (eg, 6 inches or 8 inches) onto larger size wafers (eg, 12 inches) and the heat dissipation of this silicon-based III-V structure have hindered the progress of the p...
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Patent Timeline
Login to View More IPC IPC(8): H01L21/768H01L23/535
CPCH01L21/76895H01L23/535H01L23/367H01L23/3128H01L24/02H01L21/6835H01L2221/6835H01L2224/02313H01L2224/02372H01L2224/0345H01L2224/0347H01L2224/0401H01L2224/05647H01L33/007H01L33/64H01L2224/05548H01L2224/131H01L21/76898H01L23/481H01L24/13H01L29/2003H01L33/32H01L33/62H01L2224/13024H01L2933/0033H01L2933/0066H01L33/0093H01L2924/00014H01L2924/014H01L21/76877H01L23/3675H01L23/5384
Inventor 陈明发叶松峯
Owner TAIWAN SEMICON MFG CO LTD