Corrosion-resisting metal and method for preventing metal from being corroded

An anti-corrosion and anti-corrosion technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of low density of silicon nitride film, abnormal circuit resistance of devices, corrosion of metal Al, etc.

Inactive Publication Date: 2018-05-29
苏州工业园区纳米产业技术研究院有限公司
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Problems solved by technology

[0003] PECVD is a low-temperature deposition method. The silicon nitride film deposited at low temperature is not dense and easy to form Pin-holes. When it is used as a protective layer for metal Al, after some acid wet processes, the acid will follow the Pin-hole. The hole drills down to corrode the metal Al, causing abnormal circuit resistance of the device and failure of some functions

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  • Corrosion-resisting metal and method for preventing metal from being corroded
  • Corrosion-resisting metal and method for preventing metal from being corroded
  • Corrosion-resisting metal and method for preventing metal from being corroded

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[0025] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0026] See figure 1 The anti-corrosion metal in a preferred embodiment of the present invention includes a metal body 1, a first protective layer 2 added on the metal surface and a second protective layer 3 added on the first protective layer 2, so Both the first protection layer 2 and the second protection layer 3 are made of corrosion-resistant materials, and the corrosion-resistant materials are silicon oxide and / or silicon nitride, wherein the first protection layer 2 and the second protection layer Layer 3 is made of different corrosion resistant materials. In this embodiment, the first protection layer 2 is silicon oxide, the second protection layer 3 is silicon ni...

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Abstract

The invention relates to corrosion-resisting metal and a method for preventing metal from being corroded. The corrosion-resisting metal is prepared from a metal body, a first protection layer added into the metal surface, and a second protection layer added on the first protection layer, wherein each of the first protection layer and the second protection layer is made of a corrosion-resisting material; the corrosion-resisting material is silicon oxide and/or silicon nitride; the first protection layer and the second protection layer are made of different corrosion-resisting materials. The corrosion-resisting metal provided by the invention is simple and efficient and convenient to operate; the metal is effectively prevented from being corroded under the condition that other functions arenot influenced.

Description

technical field [0001] The invention relates to an anti-corrosion metal and a method for preventing the metal from being corroded. Background technique [0002] In the MEMS process, the silicon nitride film can generally be used as an insulating layer on the metal surface to block various acid corrosion encountered in subsequent processes and protect the metal layer. Common methods for depositing silicon nitride films include LPCVD (low pressure chemical vapor deposition) and PECVD (plasma enhanced chemical vapor deposition). The LPCVD method has a slower deposition rate than the PECVD method, and the silicon nitride film has better uniformity and compactness, and fewer Pin-holes (pinholes) are produced. However, the temperature of LPCVD deposition is about 800-1200 degrees Celsius, which is much higher than that of PECVD (deposition temperature is about 300-400 degrees Celsius), and the melting point of metal Al is about 660 degrees Celsius. Therefore, in general, PECVD is...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/50C23C16/40C23C16/34
CPCC23C16/50C23C16/345C23C16/402
Inventor 吴庆才
Owner 苏州工业园区纳米产业技术研究院有限公司
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