Method for detecting uniformity of ArF excimer laser light intensity by adopting probe step scanning

A step-scanning and uniformity technology, which is used in the field of ArF excimer laser light intensity uniformity detection with probe step-scanning, which can solve the problem of unstable laser output frequency single pulse, interference with light intensity uniformity distribution, and laser pulse time. Non-uniformity and other problems, to achieve the effect of eliminating the influence of time non-uniformity, strong anti-interference ability, and high-reliability synchronous control

Active Publication Date: 2018-06-19
SICHUAN UNIV
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Problems solved by technology

However, the laser pulse has time inhomogeneity, that is, the light pulse parameters will change with time
The instability of the laser output frequency and the fluctuation of the energy of a single pulse within a certain range will affect the measurement results of the spatial uniformity distribution of the excimer laser light intensity and interfere with the evaluation of the uniformity distribution of the light intensity

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  • Method for detecting uniformity of ArF excimer laser light intensity by adopting probe step scanning
  • Method for detecting uniformity of ArF excimer laser light intensity by adopting probe step scanning
  • Method for detecting uniformity of ArF excimer laser light intensity by adopting probe step scanning

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Embodiment Construction

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings, working principles and embodiments.

[0024] The invention is mainly used for high-precision detection of the uniform distribution of laser light intensity output by the lighting system of the optical projection exposure lithography system, and provides feedback and reference for the optical design and correction of the lighting system. figure 1 Is the schematic diagram of excimer laser projection lithography illumination system. It can be seen from the figure that the illumination system of optical projection exposure lithography is a complex optical system, which consists of light source, transmission optical path, beam drift correction, beam expansion and shaping, energy detection and dose control, illumination homogenizer, mask light columns etc. The main function is to realize laser beam expansion, high-uniform high-intensity illumination, change partial ...

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Abstract

The invention provides detection of a uniformity distribution condition of ArF excimer laser light intensity by adopting a probe step scanning method in optical projection exposure photoetching and designing or debugging. Excimer laser light intensity space distribution of each time cannot be prevented from influences of laser pulse time non-uniformity, so that total energy of a certain quantity of laser pulse and sub-energy of each detection point in a scanning light field are simultaneously measured within certain time under the control of sequential logic; the uniformity distribution condition of the light intensity is balanced through the ratio of the sub-energy to the total energy. The detection provided by the invention has the advantages of high detection precision, adjustable detection parameters and capability of meeting detection requirements with different precision requirements and realizing the detection of pulse laser light intensity uniformity; meanwhile, the detection also can be used for other fields needing to carry out pulse laser light intensity distribution uniformity tests.

Description

technical field [0001] The invention relates to a method for measuring uniformity of excimer laser light intensity in optical projection exposure lithography, in particular to measuring the uniformity of excimer laser light intensity by using a probe step-and-scan method to eliminate the time inhomogeneity interference of ArF laser. Background technique [0002] Due to its good characteristics, excimer lasers have been widely used in the fields of optical projection exposure lithography, laser coating, and medicine. Optical projection exposure lithography technology is the most widely used and tenacious technology in lithography technology, and is applied in the manufacture of VLSI. In the optical projection exposure lithography technology, it is required that the light intensity distribution on the mask surface and the silicon wafer surface must be highly uniform. The uniformity of light intensity directly affects the quality of photolithography. The beam output by the ex...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 曹益平
Owner SICHUAN UNIV
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