A Heterojunction Potential Controlled Insulated Gate Bipolar Transistor

Abstract

The invention discloses a heterojunction potential-controlled insulated gate bipolar transistor, which is characterized in that it includes an SOI substrate, a drift region, an anode region, a cathode region and a gate region; the SOI substrate includes a substrate layer, a dielectric Layer and top layer of silicon; the substrate layer is a P-type or N-type doped silicon material; the dielectric layer is covered on the substrate layer, and the dielectric layer is a silicon dioxide material; the top layer of silicon is covered on the dielectric layer Above, the top layer of silicon is a P-type or N-type doped silicon material; a heterojunction potential control conductive functional region of the insulated gate bipolar transistor is formed in the top layer of silicon; the drift region is attached to the dielectric layer above, the drift region is composed of an N-base region; the anode region and cathode region are respectively located on both sides of the N-base region; the anode region includes a silicon / germanium-silicon heterojunction. The anode region also includes a potential control structure; the cathode region includes a silicon / germanium-silicon heterojunction; the gate region is attached above the cathode region.

Description

technical field [0001] The invention relates to a conductance modulation high-voltage power device in the technical field of semiconductor power electronic devices, in particular to a heterojunction potential-controlled insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT: Insulated Gate Bipolar Transistor) is a mainstream component in modern power electronic equipment. The IGBT made of SOI (Silicon On Insulator) as the substrate material is usually a lateral structure, referred to as SOI-based LIGBT, especially the thin silicon SOI-based LIGBT, which is a key component of SOI high-voltage integrated circuits. Advantages of integrating with other functional devices. [0003] From the perspective of device structure and working mechanism, the most important characteristics of IGBT devices are the PNPN four-layer structure controlled by the MOS gate and the conductance modulation effect in the drift region. When conducting ...

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Problems solved by technology

[0007] However, in the actual working circuit, most of the failures caused by overheating, overcurrent, overvoltage, and transient high current and high voltage, from the perspective of device working mechanism, the latch-up effect caused by high current is still its typical failure mechanism

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