Transistor device

Abstract

The invention provides a transistor device comprising a semiconductor material layer, a gate layer and an insulating layer. The semiconductor material layer integrally includes a first conductive part, a second conductive part, a channel part and a first protruding part. The channel part is located between the first conductive part and the second conductive part. The channel part has a first boundary, a second boundary, a third boundary and a fourth boundary, wherein the first boundary is adjacent to the first conductive part, the second boundary is adjacent to the second conductive part, and the third boundary is connected to the fourth boundary. The endpoints of the first boundary and the second boundary. The first protruding portion protrudes outward from the third boundary of the channel portion. The gate layer traverses and overlaps the channel portion. The first gate boundary and the second gate boundary of the gate layer are overlapped with the first boundary and the second boundary of the channel part. The insulating layer is disposed between the gate layer and the semiconductor material layer.

Description

technical field [0001] The present invention relates to an electronic component, and in particular to a transistor device. Background technique [0002] With the development of manufacturing technology of electronic components, the research and development of flexible electronic products has become more and more vigorous. The main problem that flexible electronic products, such as flexible display panels, must overcome is that the electronic product will be continuously bent during use, so that components in the electronic product may be easily damaged due to the application of stress. Especially in electronic components, in order to realize the performance of the product, it is necessary to use semiconductor materials. Many semiconductor materials may change their electrical conductivity (or semiconductor properties) after being subjected to stress, which leads to poor operational stability of electronic components. For example, a transistor element using semiconductor ma...

AI Technical Summary

Problems solved by technology

Many semiconductor materials may change their conductivity (or semiconducting properties) after being stressed, which leads to poor operational stability of electronic components

For example, a transistor element using semiconductor material as a channel layer may experience a shift in the conduction voltage (or threshold voltage) or a phenomenon of leakage current after being stressed.

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