Hybrid-polarity InGaN solar cell structure

A technology of solar cells and mixed polarity, which is applied in the field of solar cells and can solve problems such as low efficiency of solar cells

Active Publication Date: 2018-07-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In order to solve the technical problem of low efficiency of the traditional Ga-face polar p-i-n structure InGaN solar cell, the present invention proposes a p-i-n structure mixed pole with the p-region being N-face polarity, and the i-region and n-region being Ga-face polarity Sexual InGaN Solar Cells

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[0040] In this embodiment, a method for preparing a mixed-polarity InGaN solar cell structure is also provided, which specifically includes: sequentially growing a nucleation layer, a III-nitride buffer layer, an n-type GaN layer, and an i-region light layer on a substrate. Absorber layer, p-type GaN layer. Wherein, the polarity of the nucleation layer, the III-group nitride buffer layer, the n-type GaN layer, and the light absorbing layer in the i-region is the Ga plane polarity, and the polarity of the p-type GaN layer is the N-plane polarity.

[0041] Methods for growing various layers of materials on the substrate include but are not limited to metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy, and metal organic chemical vapor deposition is preferred. The substrate is preferably a sapphire pattern substrate.

[0042] During preparation,

[0043] The nucleation layer is preferably a GaN nucleation layer, the growth tempe...

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Abstract

The present invention provides a hybrid-polarity InGaN solar cell structure, and the structure comprises an n-type GaN layer, an i-region light absorbing layer, a p-type GaN layer, and metal electrodes which are respectively plated on the surfaces of the n-type GaN layer and the p-type GaN layer. The i-region light absorbing layer is located on the n-type GaN layer, and the p-type GaN layer is located on the i-region light absorbing layer. The polarity of the n-type GaN layer and the polarity of the i-region light absorbing layer are Ga plane polarity, and the polarity of the p-type GaN layeris N plane polarity. The sunlight irradiates the structure from the upper surface. The structure enables a polarization effect not to hinder the separation and transportation of photo-induced carriers, so as to obtain a high-efficiency InGaN solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a mixed-polarity InGaN solar cell structure. Background technique [0002] The forbidden band width of InGaN alloy material can change continuously from 0.7eV to 3.4eV with different In components. The solar spectrum is perfectly matched, making it an important material for full-spectrum solar cells. In addition, InGaN material has a high absorption coefficient, which is much higher than that of single crystal silicon and GaAs, and only a very thin InGaN material can absorb most of the sunlight. Therefore, if InGaN materials are used to prepare solar cells, not only raw materials can be saved to save costs, but also a higher power-to-mass ratio is expected to be obtained. In addition, InGaN solar cells also have the advantages of strong radiation resistance, and have great application potential in the field of space solar cells. They are the frontier research directions in ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/075
CPCH01L31/03048H01L31/075Y02E10/544Y02E10/548
Inventor 肖红领王琨王权冯春姜丽娟李巍王翠梅王晓亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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