Thin film transistor and production method thereof, array substrate and display panel

Abstract

The invention discloses a thin film transistor and a production method thereof, an array substrate and a display panel which are used for avoiding damage of an active layer, improving reliability of the thin film transistor and improving operation stability of the thin film transistor during source and drain etching. The production method includes: sequentially forming a graph of a gate, a gate insulator layer and a graph of the active layer on a substrate; after the graph of the active layer is formed, forming a graph of an etched protective layer on the graph of the active layer to allow orthographic projection of the graph of the etched protectively layer to cover part of orthographic projection of the graph of the active layer on the direction perpendicular to the substrate; forming ametal layer on the graph of the etched protective layer, and allowing the metal layer to form source and drain graphs by adopting graphics processing; removing the graph of the etched protective layer.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display panel. Background technique [0002] Thin Film Transistor (TFT) with Back channel etching (BCE) structure has high channel dimension definition accuracy, and it is easy to realize "miniaturization" of device size, and the preparation of TFT with BCE structure The process is simple, the number of masks used is small, and its production cost is low. However, since the active layer (Active) of the TFT with the BCE structure is in direct contact with the source and drain metals, the source and drain are usually formed using a wet etching process. The existing technology uses a wet etching process to form the source , The process of the drain is easy to damage the Active, which affects the reliability of the TFT. Contents of the invention [0003] The embodiment of the present a...

AI Technical Summary

Problems solved by technology

However, since the active layer (Active) of the TFT with the BCE structure is in direct contact with the source and drain metals, the source and drain are usually formed using a wet etching process. The existing technology uses a wet etching process to form the source , The process of the drain is easy to damage the Active, which affects the reliability of the TFT

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