A Photoelectric Detection Module Based on Avalanche Photodetector

Abstract

The invention relates to a photoelectric detection module based on an avalanche photoelectric detector, belonging to the technical field of photoelectrons. Through the design of appropriate parameters, the load capacity of a three-stage semiconductor cooler is far greater than that of a single-stage semiconductor cooler, and the limit working temperature of the photoelectric detection module is improved. The cooling coefficient and load capacity of the first stage of the three-stage semiconductor cooler are smaller than those of the single-stage semiconductor cooler, and the temperature control precision of the photoelectric detection module is improved. The equivalent input total capacitance of a transresistance amplifier is greatly reduced, and the noise gain of the transresistance amplifier is lowered. The electromagnetic interference to the circuit of the transresistance amplifier is basically eliminated, and the noise level of the transresistance amplifier is lowered. The workingtemperature of the photoelectric detection module of the invention can be within a range from -40 DEG C to +50 DEG C, the temperature control precision is up to + / -0.05 DEG C, and the output noise canbe as low as 2.5mv.

Description

technical field [0001] The invention relates to a photoelectric detection module based on an avalanche photodetector, which belongs to the field of optoelectronic technology. Background technique [0002] The main components of the photodetection module are avalanche photodetectors and transimpedance amplifiers. Avalanche photodetectors mainly use the avalanche amplification process of carriers to amplify the photocurrent and improve the detection sensitivity of weak signal light. A transimpedance amplifier converts the photocurrent signal of an avalanche photodetector into an easily processable voltage signal. [0003] The current gain of an avalanche photodetector is expressed by the multiplication factor M, usually defined as the multiplied photocurrent i 1 and the photocurrent i when the multiplication effect does not occur 0 Ratio. The multiplication factor M can be expressed as: [0004] [0005] Among them, V B is the breakdown voltage; V is the reverse bias ...

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Problems solved by technology

[0011] The current avalanche detectors and transimpedance amplifiers are packaged independently, and the stray capacitance at the input of the transimpedance amplifier is relatively large, and the electromagnetic interference noise is serious, which affects the signal-to-noise ratio of the output signal of the photoelectric detection module, which cannot meet the design requirements

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