Back-illuminated image sensor and manufacturing method thereof and electronic device

A technology of an image sensor and a manufacturing method, applied in the directions of radiation control devices, circuits, electrical components, etc.

Active Publication Date: 2018-07-31
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For back-illuminated image sensors, it is acceptable that the back structure does not have a deep trench isolation (DTI) structure, but back-illuminated image sensors are subject to Si / ARC / insulating layer / back passivation layer in the pixel area and logic area. isostructural constraints

Method used

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  • Back-illuminated image sensor and manufacturing method thereof and electronic device
  • Back-illuminated image sensor and manufacturing method thereof and electronic device
  • Back-illuminated image sensor and manufacturing method thereof and electronic device

Examples

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Embodiment 1

[0075] Below, refer to figure 1 as well as Figure 2A to Figure 2F The detailed steps of an exemplary method of the manufacturing method of the back-illuminated image sensor proposed by the embodiment of the present invention will be described. in, figure 1 It is a schematic flowchart of a manufacturing method of a back-illuminated image sensor according to an embodiment of the present invention, 2A to 2A Figure 2F It is a cross-sectional view of a structure formed in related steps of a manufacturing method of a back-illuminated image sensor according to an embodiment of the present invention.

[0076] Such as figure 1 As shown, the manufacturing method specifically includes the following steps:

[0077] Step S1: providing a first wafer including a pixel region, the first wafer including a first surface and a second surface oppositely arranged;

[0078] Step S2: providing a second wafer and bonding the second wafer to the first surface of the first wafer;

[0079] Step ...

Embodiment 2

[0169] An embodiment of the present invention provides a back-illuminated image sensor, which is prepared by the manufacturing method in the first embodiment above. The back-illuminated image sensor may be an integrated circuit including a radio frequency (RF) device or an intermediate product of an integrated circuit.

[0170] Below, refer to Figure 2F A structure of a back-illuminated image sensor proposed by an embodiment of the present invention will be described. in, Figure 2F It is a cross-sectional view of the structure of the back-illuminated image sensor of the embodiment of the present invention.

[0171] Such as Figure 2F As shown, the back-illuminated image sensor of this embodiment includes:

[0172] a first wafer comprising a pixel region, the first wafer comprising a first surface and a second surface oppositely disposed;

[0173] A second wafer 203, the second wafer is bonded to the first surface of the first wafer;

[0174] a deep trench located on th...

Embodiment 3

[0209] An embodiment of the present invention provides an electronic device, which includes an electronic component and a back-illuminated image sensor electrically connected to the electronic component. Wherein, the back-illuminated image sensor includes the back-illuminated image sensor manufactured according to the manufacturing method of the back-illuminated image sensor described in the first embodiment, or includes the back-illuminated image sensor described in the second embodiment.

[0210] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned back-illuminated image sensor, such as a mobile phone motherboard with this integrated circuit, etc.

[0211] in, image 3 An example of a mobile phone handset is shown. The mobile phone handset 300 is ...

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Abstract

The invention relates to a back-illuminated image sensor and a manufacturing method thereof and an electronic device. The method comprises steps: a first wafer comprising a pixel area is provided, wherein the first wafer comprises a first surface and a second surface which are arranged oppositely; a second wafer is provided, and the second wafer is joined with the first surface of the first wafer;a plurality of spaced deep grooves are formed in the second surface opposite to the pixel area; and an anti-reflection layer is formed in the deep groove. According to the method in the invention, the deep grooves are formed in the back surface of the first wafer and the anti-reflection layers are formed in the deep grooves, and through the above arrangement, crosstalk and dark current can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a back-illuminated image sensor, a manufacturing method thereof, and an electronic device. Background technique [0002] Generally, the image sensor is a back-illuminated image sensor that converts an optical image into an electrical signal. Image sensors include Charge Coupled Devices (CCD) and Complementary Metal Oxide Semiconductor (CMOS) image sensors. [0003] Since CMOS image sensors (CMOS image sensors, CIS) have improved manufacturing technologies and characteristics, various aspects of semiconductor manufacturing technologies are focused on developing CMOS image sensors. CMOS image sensors are manufactured using CMOS technology, and have lower power consumption, are easier to achieve high integration, and produce smaller devices. Therefore, CMOS image sensors are widely used in various products, such as digital cameras and digital video cameras. [0004] Backsid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14625H01L27/14685
Inventor 姚国峰陆珏张海芳刘煊杰
Owner SEMICON MFG INT (SHANGHAI) CORP
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