Application of boron-containing hole doping agent in hole transmission layer of perovskite solar cell

A technology of solar cells and hole transport layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low hole mobility materials application, unfavorable preparation of high-efficiency perovskite solar cells, etc.

Inactive Publication Date: 2018-08-03
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, Spiro-OMeTAD doped with Li salt is commonly used as a hole transport material in forward structure perovskite solar cells, but Spiro-OMeTAD needs to be sufficiently oxidized in an oxygen environment, which is not conducive to the preparation of high-...

Method used

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  • Application of boron-containing hole doping agent in hole transmission layer of perovskite solar cell
  • Application of boron-containing hole doping agent in hole transmission layer of perovskite solar cell
  • Application of boron-containing hole doping agent in hole transmission layer of perovskite solar cell

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Embodiment

[0024] This embodiment is the application of a boron-containing hole dopant doped hole transport material in a perovskite solar cell. The specific steps include:

[0025] Step 1) Clean the cut ITO conductive glass, the sequence is ethanol, ultrapure water, cleaning agent, ultrapure water, and ethanol for 10 minutes respectively. And blow dry with nitrogen to obtain a clean conductive glass substrate.

[0026] Step 2) Treat the clean conductive glass substrate in the previous step with UV-O3 for 15min.

[0027] Step 3) the mass fraction is 15% SnO 2 The nano glue solution is diluted 6 times with deionized water, spin-coated with 4000rpm in the air in step 2) UV-O 3 Spin-coat on the treated ITO glass for 30s, and then anneal it on a hot stage at 150°C for 30min.

[0028] Step 4) take by weighing 461mg PbI2 and 159mg MAI dissolve and in the mixed solvent of 1mL DMF and DMSO (V DMF :V DMSO =4:1) Stir at 60°C for 2h until completely dissolved to obtain a perovskite precursor s...

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Abstract

The invention relates to an application of a boron-containing hole doping agent in a hole transmission layer of a perovskite solar cell, and belongs to the field of photoelectron materials and devices. According to the invention, 4-isopropyl-4'-methyldiphenyliodonium tetrakis(pentafluorophenyl)borate or tris(pentafluorophenyl)borane is enabled to serve as a dopant, and is added to a hole transmission material according to a mass ratio of 1%-15%. The spinning coating technology is used for forming a film on a perovskite film of a perovskite solar cell of a forwarding structure, and the film isused as the hole transmission layer of the perovskite solar cell of the forwarding structure.

Description

technical field [0001] The present invention is a hole transport material doped with 4-isopropyl-4'-methyldiphenyliodonium tetrakis(pentafluorophenyl)borate or tris(pentafluorophenyl)borane respectively. Application in perovskite solar cells, especially a 4-isopropyl-4'-methyldiphenyliodonium tetrakis(pentafluorophenyl)borate or tris(pentafluorophenyl)borane Doped Poly-TPD, PTAA or TFB are used as hole transport materials for forward structure perovskite solar cells. Background technique [0002] With the continuous development of society, people pay more and more attention to the energy crisis and the environmental problems caused by traditional fossil energy, and it is imminent to expand environmentally friendly and renewable energy. As a renewable and clean resource, solar energy has attracted people's attention, and the development of solar cells is one of the important ways to utilize solar energy. At present, silicon-based solar cells are mainly widely used, but the ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/10H10K30/15H10K30/10Y02E10/549H10K85/322H10K85/50
Inventor 陈永华汪泽夏英东黄维
Owner NANJING UNIV OF TECH
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