Semiconductor wafer hole manufacturing method

Abstract

The invention relates to the radio frequency microwave semiconductor making technology field and particularly relates to a semiconductor wafer hole manufacturing method. The method comprises steps that etching rates of two holes are acquired through the test on a test wafer, and the equal etching rate of the test photoresist and the etching time of the two holes in one-to-one correspondence with cross-sectional areas of the two holes are acquired through calculation; a first photoresist layer is laid on a surface of a wafer, the first photoresist layer is exposed and developed to form a firstgraphic photoresist layer; thickness of the correction photoresist layer is acquired through calculation; the correction photoresist layer with the thickness is laid on the surface of the wafer, and the correction photoresist layer is exposed and developed to form a second graphic photoresist layer; the wafer is etched along the first graphic photoresist layer, and the wafer having the two holes is formed. The method is advantaged in that the relatively long etching time is taken as reference, the etching time of another hole is extended through laying the correction photoresist layer, and theetching depth beyond a preset value or damage to the wafer is avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a method for manufacturing holes in semiconductor wafers. Background technique [0002] With the continuous expansion of new semiconductor applications, many traditional semiconductor processes can no longer meet the needs of product production, among which the semiconductor wafer hole manufacturing process is particularly prominent. [0003] In the RF-MEMS process, due to the need for impedance matching, it is often necessary to make blind holes of two different sizes or two different depths on the Si wafer. In response to the above requirements, two processes are usually used: one is to etch two kinds of blind holes twice, because the depth of blind holes is generally tens or even hundreds of microns, which makes the second photolithography difficult and poor in stability; The second is to use one-time photolithography. In this way, when the dep...

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Problems solved by technology

In response to the above requirements, two processes are usually used: one is to etch two kinds of blind holes twice, because the depth of blind holes is generally tens or even hundreds of microns, which makes the second photolithography difficult and poor in stability; The second is to use one-time photolithography. In this way, when the depths of the two holes are different, the holes with the smaller depth often need to be further extended after the hole is formed; when the two holes have different sizes, the cross-sectional The etching rate of holes with a large area is slow, and often after the formation of holes with a small cross-sectional area, the holes with a large cross-sectional area do not meet the etching requirements, and the etching time needs to be further extended; it can be seen that the two methods of the second method In both cases, it is necessary to extend the etching time, which will cause the depth of the hole formed by etching faster to be greater than the preset value, reduce the precision of the wafer, and even cause damage to the wafer

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