39results about How to "Extend etch time" patented technology

A method for interlaminating an embossed hologram, the embossed hologram comprising an optionally transparent support having two sides, at least one of the two sides either itself being embossed or having a layer thereon which is embossed and a layer of a HRI- material contiguous with the embossed side or embossed layer, comprising the steps of : a) conditioning the outermost surface of the layer of inorganic HRI- material with an alkaline solution or an acidic solution; b) drying the outermost surface of the layer of the inorganic HRI- material thereby providing a conditioned outermost surface of the layer of inorganic HRI-material; c) applying a layer of an adhesive composition to the conditioned outermost surface of the layer of inorganic HRI-material support; and d) laminating the outermost surface of the layer of HRI-material to a polymer film, wherein at least one of the support and the polymer film is transparent; and wherein the HRI material is a material with a refractive index of at least 0.3 higher than that of the embossed material. A laminate obtainable therewith, and a security document comprising the laminate are also disclosed.

The invention discloses a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjustment agent for adjusting the thickness, and water. The invention also discloses an etching method and an application of the novel etching solution. The novel etching solution and the etching method are generally suitable for etching film materials based on Sn, Zn, Al, Ga and In and alloy oxides thereof, especially oxide materials of ZnO, AZO, GZO, IGZO and IZO, and can also be widely used for etching oxide materials for making fine electronic components, such as semiconductor photoelectric devices, solar cells, TFT film transistors, semiconductor integrated circuits and transparent electrodes. Compared with traditional etching solutions, the novel etching solution has the advantages of lateral etching inhibition, uneven etching prevention and etching residual prevention.

The invention discloses UV gravure RFID printing ink and a preparation method thereof; the UV gravure RFID printing ink comprises, by weight:10-30 parts of petroleum resin, 10-30 parts of acrylic acid prepolymer, 0.1-1 part of a polymerization inhibitor, 5-12 parts of a photoinitiator, 5-10 parts of pigment, 1-5 parts of a dispersant, and 20-50 parts of acrylic acid monomers. The UV gravure RFID printing ink of the invention has the following beneficial effects: the printing ink is suitable for gravure press and flexo-graphic machines, is instantly dried by an ultraviolet lamp, which greatly increases the working efficiency. After dried, the printing ink can resist strong acid etching; the concentration of the etching acid can be adjusted at will; the etching solution temperature can be increased; the etching time can be increased; and thus processing of various RFID labels can be met. After drying and etching, the printing ink is easy to be washed by alkalis, and a 3% NaOH solution can remove the ink within 5-20 seconds. The line surface is effectively maintained to be clean and free of printing ink residues, and thus the final product quality is ensured.

The embodiment of the present application discloses a method for forming a contact groove and a semiconductor. The method includes: providing a semi-finished semiconductor, the semiconductor includes a first structure using a first material corresponding to different regions, and a second material using a second structure. The second structure of the second structure, and at least the third structure with the second material on the top; through the same first etching process, using the different etching rates of the first material and the second material, the first structure, the second structure and the third structure are etched to form grooves of a specific depth; wherein, the etching rate of the first material is greater than the etching rate of the second material, so that using the The top of the third structure of the second material acts as an etch stop layer.

The invention relates to an etching method for silver-copper solder, which comprises the following steps: (1) Alkaline degreasing: put the brazed semi-finished shell into an alkaline degreasing solution for cleaning; (2) Washing: first rinse with tap water, and then Clean it with deionized water; (3) pickling: put the washed shell into the pickling solution to clean; (4) dry; use a high-temperature blast drying box to dry the washed shell at high temperature; (5) ) Etching: Put the casing into the etching solution; (6) After the etching is completed, take out the casing and repeat the process step (2) washing with water, and step (4) drying. Advantages: 1) There is no corrosion damage to the etching of silver-copper solder, and the shell brazing shape, size, solder coverage and subsequent plating reliability are high. 2) Slow down the etching process, increase the range of etching time, 3) reduce environmental pollution; 4) low cost, simple and easy to implement; 5) solve the "silver migration" problem of the RF power device casing, the effect is remarkable.

A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least C3F6, a hydrogen-containing saturated fluorocarbon represented by CxHyFz and an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of C3F6 contained in the dry etching agent.

The present invention provides a kind of etching method, and this etching method comprises the following steps of carrying out alternately: Initial deposition step, pass into deposition gas, form the first protective layer on the bottom wall surface and the side wall surface of the groove of substrate In the initial etching step, an etching gas is introduced to etch the first protective layer on the bottom wall surface of the groove, and a protective gas is introduced at the same time, and the protective gas can oxidize the substrate to form a A second protection layer is formed on the bottom wall surface of the trench and on the first protection layer on the side wall surfaces. In the present invention, the etching method can form the first protective layer and the second protective layer on the sidewall surface of the trench. Compared with the prior art, the etching method provided by the present invention can reduce the lateral etching speed , so that the occurrence of side wall bending can be effectively reduced, thereby improving product quality.

The invention provides a convex point fabrication method which can avoid blue membrane appearance. The existing convex point fabrication method uses low-temperature sulfuric acid solution for carrying out the etching, so as to remove a metal layer below the convex point; the metal layer below the convex can be removed, but the blue membrane is easy to be generated. In the convex point fabrication method of the invention which can avoid the blue membrane appearance, a metal layer below the convex point is firstly deposited on the existing wafers with a metal pad and a passivation layer fabricated, a light resistance layer is plated on the metal layer and the convex point images are transferred on the light resistance layer by lithography and development; the convex point is then fabricated and the light resistance is removed then; the sulfuric acid solution is then used for carrying out the etching, so as to remove the metal layer below the convex point which is covered by non-convex point; the convex point is finally refluxed; wherein, in the step that the metal layer below the convex point under the coverage of non-convex point is removed by carrying out the etching with the sulfuric acid solution, the etching temperature is not lower than 35 DEG C and the etching time is not less than 310 seconds. Blue membranes can be avoided by adopting the method of the invention when the convex point is fabricated.

The invention provides a microphone and a manufacturing method thereof. By adding grooves on the front side of the substrate, the thickness of the film layer material used to make the back cavity can be relatively increased, and the back cavity can be etched with a larger debugging space, which is advantageous. It is beneficial to increase the etching time from the direction of adjusting the process formula, thereby improving or eliminating the sharp corners formed on the front side of the substrate after the back cavity etching, and the sharp corners formed on the front side of the substrate after the back cavity etching still cannot pass through When the adjustment of the process formula is completely eliminated, the addition of the groove can increase the distance from the sharp corner on the front of the substrate to the diaphragm, so that the diaphragm cannot touch the sharp corner when vibrating, improving the reliability and good performance of the device. Rate. In addition, the addition of grooves on the front surface of the substrate helps to reduce the thickness of the first sacrificial layer on the periphery of the groove without sacrificing device performance, thereby facilitating the development of the microphone to a smaller size.

Embodiments of the present invention provide a substrate, a manufacturing method thereof, and a display device. In the field of display technology, the slope angle of the second via hole can be reduced to improve the display effect of the display device. A method for preparing a substrate, comprising: sequentially forming a first flat film and a second flat film on a substrate, the hardness of the first flat film is greater than that of the second flat film; The second planar film and the first planar film are etched to obtain a first planar layer and a second planar layer sequentially disposed on the substrate; the first planar layer includes a first via hole, and the first planar layer includes The second planar layer includes a second via hole, at least part of the orthographic projection of the second via hole on the substrate overlaps with the orthographic projection of the first via hole on the substrate.

The present invention relates to a display panel and a preparation method thereof. In the present invention, a first groove is formed in the display area from the surface of the interlayer insulating layer in the display area away from the substrate to the barrier layer and from the curved surface through the first mask at the same time. The surface of the interlayer insulating layer of the folded region away from the substrate penetrates to the first groove body of the second groove in the active layer, which saves the cost of the mask. On the other hand, the present invention retains the active layer in the bending area, thereby prolonging the etching time of the first groove body, so that the first mask can satisfy the depth of the first groove and the first groove of the second groove at the same time. body depth requirements.