39results about How to "Extend etch time" patented technology

The invention discloses a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjustment agent for adjusting the thickness, and water. The invention also discloses an etching method and an application of the novel etching solution. The novel etching solution and the etching method are generally suitable for etching film materials based on Sn, Zn, Al, Ga and In and alloy oxides thereof, especially oxide materials of ZnO, AZO, GZO, IGZO and IZO, and can also be widely used for etching oxide materials for making fine electronic components, such as semiconductor photoelectric devices, solar cells, TFT film transistors, semiconductor integrated circuits and transparent electrodes. Compared with traditional etching solutions, the novel etching solution has the advantages of lateral etching inhibition, uneven etching prevention and etching residual prevention.

The invention relates to a method for preparing protective film playing a role in protecting glass micro-fluidic chips in etching process. The method comprises the steps of plating a glass substrate with a chromium sacrificial layer, smearing glue, baking the glue, performing UV exposure, developing, removing the chromium sacrificial layer, performing wet etching, removing the glue, removing the chromium sacrificial layer and sealing at high temperature when a glass micro-fluidic chip is conventionally manufactured. The method is characterized in that positive photoresist containing linear phenolic resin is taken as a basis; after the developing step and before the follow-up step of removing the chromium sacrificial layer, by taking a formaldehyde monomer aqueous solution or a glutaraldehyde aqueous solution with a certain concentration and pH value as a cross-linking agent, formaldehyde or glutaraldehyde and the linear phenolic resin in the positive photoresist containing the linear phenolic resin are subjected to cross-linking reaction; and the photoresist is cross-linked to be the protective film of which the body type is in a network structure so as to enable the photoresist protective film to prolong the time of tolerating the corrosion of hydrofluoric acid glass etching liquid and increase the etching depth of micro-fluidic channels. The method is applicable to the glass substrates plated with other metal sacrificial layers.

The invention discloses UV gravure RFID printing ink and a preparation method thereof; the UV gravure RFID printing ink comprises, by weight:10-30 parts of petroleum resin, 10-30 parts of acrylic acid prepolymer, 0.1-1 part of a polymerization inhibitor, 5-12 parts of a photoinitiator, 5-10 parts of pigment, 1-5 parts of a dispersant, and 20-50 parts of acrylic acid monomers. The UV gravure RFID printing ink of the invention has the following beneficial effects: the printing ink is suitable for gravure press and flexo-graphic machines, is instantly dried by an ultraviolet lamp, which greatly increases the working efficiency. After dried, the printing ink can resist strong acid etching; the concentration of the etching acid can be adjusted at will; the etching solution temperature can be increased; the etching time can be increased; and thus processing of various RFID labels can be met. After drying and etching, the printing ink is easy to be washed by alkalis, and a 3% NaOH solution can remove the ink within 5-20 seconds. The line surface is effectively maintained to be clean and free of printing ink residues, and thus the final product quality is ensured.

The invention provides a transistor forming method. The method includes forming a first false grid layer, a sacrificial layer and a second false grid layer on a substrate from bottom to top; forming a side wall on the side wall of a false grid, and obtaining a false grid structure comprising the false grid and the side wall; forming a source region and a leak region in the substrate; forming an interlayer medium layer exposing the surface of the false grid structure; allowing the sacrificial layer to serve as an etching stop layer, and removing the second false grid layer of the false grid structure by dry etching; removing the sacrificial layer; removing the first false grid layer by wet etching, and forming an opening; forming a metal grid electrode structure in the opening. The method has the advantages that the influence of the substrate during false grid removal is small, and the quality of a formed transistor is improved.

The invention relates to an etching method for silver-copper solder. The etching method comprises the following steps of (1) alkaline oil removal, specifically, a brazed semi-finished product outer shell is put into an alkaline oil removal solution to be cleaned up; (2) water washing, specifically, the brazed semi-finished product outer shell is washed by tap water firstly and then washed by usingdeionized water; (3) pickling, specifically, the water-washed outer shell is put into a pickling liquid to be washed; (4) drying, specifically, a high-temperature blast drying box is used for high-temperature drying the water-washed outer shell; (5) etching, specifically, the outer shell is placed in an etching solution; and (6) final processing, specifically, the outer shell is taken out after etching is finished, the step (2) water washing and the step (4) drying are repeated. The etching method has the advantages that (1) the silver-copper solder is etched without any corrosion damage, thecoverage of outer shell brazing appearance, size, solder and subsequent plating reliability are high; (2) the etching process is slowed down, and the etching time range is increased; (3) environmental pollution is relieved; (4) the etching method is low in cost, simple and easy to operate; and (5) the problem of silver displacement of radio frequency power device outer shells is solved, and the effect is remarkable.

The embodiment of the invention provides a base plate and a preparation method thereof and a display device, and relates to the technical field of display. The slope angle of a second via hole can bereduced so as to improve the display effect of the display device. The preparation method of the base plate comprises the following steps: a first flat film and a second flat film are sequentially formed on a substrate, and the hardness of the first flat film is larger than that of the second flat film; the second flat film and the first flat film are etched by adopting a photo-etching process toobtain a first flat layer and a second flat layer which are sequentially arranged on the substrate; and the first flat layer comprises a first via hole, the second flat layer comprises a second via hole, and the orthographic projection of at least part of the second via hole on the substrate is overlapped with the orthographic projection of the first via hole on the substrate.

The present disclosure relates to a technical field of OLED display and discloses an OLED backboard, a method of manufacturing the same, an alignment system and an alignment method thereof, which aims to solve a problem of low efficiency in forming an organic light-emitting material layer on the OLED backboard. The OLED backboard comprises: a transparent substrate; at least two functional layers disposed on the upper surface of the transparent substrate and stacked on each other; at least two via holes formed in predefined areas of the at least two functional layers and extending through at least the upper one of the at least two functional layers; and at least two alignment modules located in the at least two via holes respectively, wherein each of the at least two alignment modules comprises at least three first alignment structures arranged in a predefined trace, and a virtual alignment point is allowed to be determined based on the relative position among all the first alignment structures in each of the alignment modules. The efficiency of forming the organic light-emitting material layer on the OLED backboard is thus increased by using the above OLED backboard.

The invention provides a method for etching a silicide-blocked oxide layer. The method includes the steps that in predetermined technological conditions, partial etching is performed on the silicide-blocked oxide layer through dry etching; further etching is performed on the silicide-blocked oxide layer through wet etching so as to form patterns of the silicide-blocked oxide layer. The predetermined technological conditions are that etching power is 150W-250W, pressure is 50mT-100mT, and etching time is not less than 10 seconds.

The invention provides a manufacturing method for a composite of an aluminum alloy and plastic. The composite is obtained by covering the outer surface of the aluminum alloy with the plastic. The manufacturing method comprises the following steps: S1, carrying out oil-removing, dust-removing and coarse etching treatment on the surface of the aluminum alloy; step 2, immersing the aluminum alloy prepared by the step S1 into an etching solution to be finely etched to prepare an aluminum alloy with fine lines or fine holes on the surface, wherein a coating formed by an etching solution solvent covers the prepared fine lines or fine holes; S3, washing the etched aluminum alloy with water; S4, drying the aluminum alloy washed with the water; and S5, integrally molding by injecting the aluminum alloy and the plastic to obtain the composite. In the step S2, the etching solution is a mixed solution of cyclohexanone and fine gloss oil containing a nitrogen element. The etching solution is mixed with the fine gloss oil so that the fine gloss oil is attached on the surface of the aluminum alloy to form the coating when the aluminum alloy is etched; and the fine lines can be prevented from expanding and being recovered due to the self tension of the aluminum alloy, the widths and the depths of the fine lines and the fine holes are kept, and the aluminum alloy is conveniently combined with the plastic by injection molding.

A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least C₃F₆, a hydrogen-containing saturated fluorocarbon represented by C_xH_yF_z and an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of C₃F₆ contained in the dry etching agent.

The invention relates to the radio frequency microwave semiconductor making technology field and particularly relates to a semiconductor wafer hole manufacturing method. The method comprises steps that etching rates of two holes are acquired through the test on a test wafer, and the equal etching rate of the test photoresist and the etching time of the two holes in one-to-one correspondence with cross-sectional areas of the two holes are acquired through calculation; a first photoresist layer is laid on a surface of a wafer, the first photoresist layer is exposed and developed to form a firstgraphic photoresist layer; thickness of the correction photoresist layer is acquired through calculation; the correction photoresist layer with the thickness is laid on the surface of the wafer, and the correction photoresist layer is exposed and developed to form a second graphic photoresist layer; the wafer is etched along the first graphic photoresist layer, and the wafer having the two holes is formed. The method is advantaged in that the relatively long etching time is taken as reference, the etching time of another hole is extended through laying the correction photoresist layer, and theetching depth beyond a preset value or damage to the wafer is avoided.

The invention discloses a piezoresistive beam stress concentration micro-pressure sensor chip and a preparation method thereof, the sensor chip comprises a silicon substrate and a glass substrate, the back surface of the silicon substrate is etched with a back cavity, the bottom surface of the back cavity is a pressure-bearing film, and the front surface of the pressure-bearing film is provided with a first piezoresistive beam, a second piezoresistive beam, a third piezoresistive beam and a fourth piezoresistive beam; the first piezoresistive beam, the second piezoresistive beam, the third piezoresistive beam and the fourth piezoresistive beam are respectively provided with piezoresistor strips respectively, the length direction of each piezoresistor strip is the same as the length direction of the piezoresistive beam where the piezoresistor strip is located, and the piezoresistor strips are connected through metal leads and metal bonding pads to form a Wheatstone bridge. The problem that the beam structure cannot be narrower because the width of the beam structure must be larger than the width of the piezoresistor strips due to the fact that the piezoresistor strips on a traditional beam structure are arranged perpendicular to the straight line where the beam structure is located is solved.

The invention provides a convex point fabrication method which can avoid blue membrane appearance. The existing convex point fabrication method uses low-temperature sulfuric acid solution for carrying out the etching, so as to remove a metal layer below the convex point; the metal layer below the convex can be removed, but the blue membrane is easy to be generated. In the convex point fabrication method of the invention which can avoid the blue membrane appearance, a metal layer below the convex point is firstly deposited on the existing wafers with a metal pad and a passivation layer fabricated, a light resistance layer is plated on the metal layer and the convex point images are transferred on the light resistance layer by lithography and development; the convex point is then fabricated and the light resistance is removed then; the sulfuric acid solution is then used for carrying out the etching, so as to remove the metal layer below the convex point which is covered by non-convex point; the convex point is finally refluxed; wherein, in the step that the metal layer below the convex point under the coverage of non-convex point is removed by carrying out the etching with the sulfuric acid solution, the etching temperature is not lower than 35 DEG C and the etching time is not less than 310 seconds. Blue membranes can be avoided by adopting the method of the invention when the convex point is fabricated.

The invention discloses a long bar processing method, which comprises the following steps: (1) providing a fixture, wherein the fixture is provided with an upper surface matched with the long bar; (2) forming a heat conduction layer on the upper surface; (3) forming a dry film layer on the heat conduction layer; (4) splicing the long bar to the fixture, and causing one surface of the long bar to be fit with the dry film layer; and (5) etching the long bar. The method has the advantage of high heat conduction efficiency, the long bar can be prevented from being burnt in an etching process. The invention also discloses a long bar processing device.