40results about How to "Extend etch time" patented technology

A method for interlaminating an embossed hologram, the embossed hologram comprising an optionally transparent support having two sides, at least one of the two sides either itself being embossed or having a layer thereon which is embossed and a layer of a HRI- material contiguous with the embossed side or embossed layer, comprising the steps of : a) conditioning the outermost surface of the layer of inorganic HRI- material with an alkaline solution or an acidic solution; b) drying the outermost surface of the layer of the inorganic HRI- material thereby providing a conditioned outermost surface of the layer of inorganic HRI-material; c) applying a layer of an adhesive composition to the conditioned outermost surface of the layer of inorganic HRI-material support; and d) laminating the outermost surface of the layer of HRI-material to a polymer film, wherein at least one of the support and the polymer film is transparent; and wherein the HRI material is a material with a refractive index of at least 0.3 higher than that of the embossed material. A laminate obtainable therewith, and a security document comprising the laminate are also disclosed.

The invention discloses a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjustment agent for adjusting the thickness, and water. The invention also discloses an etching method and an application of the novel etching solution. The novel etching solution and the etching method are generally suitable for etching film materials based on Sn, Zn, Al, Ga and In and alloy oxides thereof, especially oxide materials of ZnO, AZO, GZO, IGZO and IZO, and can also be widely used for etching oxide materials for making fine electronic components, such as semiconductor photoelectric devices, solar cells, TFT film transistors, semiconductor integrated circuits and transparent electrodes. Compared with traditional etching solutions, the novel etching solution has the advantages of lateral etching inhibition, uneven etching prevention and etching residual prevention.

The invention provides a microphone and a manufacturing method thereof. By adding grooves on the front side of the substrate, the thickness of the film layer material used to make the back cavity can be relatively increased, and the back cavity can be etched with a larger debugging space, which is advantageous. It is beneficial to increase the etching time from the direction of adjusting the process formula, thereby improving or eliminating the sharp corners formed on the front side of the substrate after the back cavity etching, and the sharp corners formed on the front side of the substrate after the back cavity etching still cannot pass through When the adjustment of the process formula is completely eliminated, the addition of the groove can increase the distance from the sharp corner on the front of the substrate to the diaphragm, so that the diaphragm cannot touch the sharp corner when vibrating, improving the reliability and good performance of the device. Rate. In addition, the addition of grooves on the front surface of the substrate helps to reduce the thickness of the first sacrificial layer on the periphery of the groove without sacrificing device performance, thereby facilitating the development of the microphone to a smaller size.

Embodiments of the present invention provide a substrate, a manufacturing method thereof, and a display device. In the field of display technology, the slope angle of the second via hole can be reduced to improve the display effect of the display device. A method for preparing a substrate, comprising: sequentially forming a first flat film and a second flat film on a substrate, the hardness of the first flat film is greater than that of the second flat film; The second planar film and the first planar film are etched to obtain a first planar layer and a second planar layer sequentially disposed on the substrate; the first planar layer includes a first via hole, and the first planar layer includes The second planar layer includes a second via hole, at least part of the orthographic projection of the second via hole on the substrate overlaps with the orthographic projection of the first via hole on the substrate.