Novel etching solution used in oxide material system, and etching method and application thereof

A technology of oxides and etching solutions, applied in chemical instruments and methods, surface etching compositions, cable/conductor manufacturing, etc.

Active Publication Date: 2014-08-13
FOSHAN INST SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0031] In order to overcome the above-mentioned technical defects, the present invention discloses a new type of etching solution for oxide material systems that can suppress side etching, prevent uneven etching, and prevent etching residues

Method used

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  • Novel etching solution used in oxide material system, and etching method and application thereof
  • Novel etching solution used in oxide material system, and etching method and application thereof
  • Novel etching solution used in oxide material system, and etching method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0087] Choose to be deployed into novel etching solution by phosphoric acid, polyethylene glycol and water, wherein the preferred concentration of phosphoric acid is 0.01-80wt%, the preferred concentration of polyethylene glycol is 0.1-80wt%, the preferred water content for dilution is 10- 90wt%. The proportions of different formulations of each component directly affect the rate and etching effect of etching, but all have better etching effects. In this embodiment, the new etching solution consists of 25% polyethylene glycol, 25% phosphoric acid and 50% % of water composition, using mass spectrometry (MS), infrared spectrometry (IR) and energy spectrum analysis (EDS) and other test methods to determine the composition.

[0088] Obtain the mass spectrum of the liquid to be tested by mass spectrometry, such as figure 1 As shown, after searching by mass spectrometer, the composition of similar substances in the mass spectrum obtained from the sample is obtained from high to low...

Embodiment 2

[0098] The traditional etchant is in the form of a solution. When etching the oxide material, the oxide material is immersed in the solution to react, which is called "soaking" etching method; and for the colloidal new etchant of the present invention, it can be The oxide material is etched by means of spin coating or spraying, and the method of spin coating or spraying is called "coating" etching mode herein.

[0099] In the "coating" etching method of the present invention, the process is to coat the new etching solution on the oxide film material with a photoresist pattern formed by using photoresist glue by spin coating or spraying, and the new etching solution coating The exposed oxide film material is etched, and after the etching is completed, the residual etching solution is removed with deionized water, and the coating can be etched repeatedly.

[0100] The "coating" etching method that the present invention adopts here, can adopt general-purpose spin coating or spray...

Embodiment 3

[0120] The application of the novel etching solution of the present invention will be described through this embodiment.

[0121] The above-mentioned features of the novel etching solution of the present invention are extremely useful for etching fine semiconductor optoelectronic devices, solar cells, TFT thin film transistors, semiconductor integrated circuits and transparent electrodes prepared by "oxide material system".

[0122] The new etchant is applied to the etching of oxide materials in semiconductor optoelectronic devices. Al, Ga, Zn, In-based oxide thin film materials are typically used in device applications, typically AZO, GZO, IZO or their combination components, as Transparent conductive films for optoelectronic devices such as LEDs and solar cells, or transparent electrodes for electronic devices such as TFT in the display field, or interconnect electrode materials for transparent electronics and other fields. These device fields all require the etching of oxid...

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PUM

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Abstract

The invention discloses a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjustment agent for adjusting the thickness, and water. The invention also discloses an etching method and an application of the novel etching solution. The novel etching solution and the etching method are generally suitable for etching film materials based on Sn, Zn, Al, Ga and In and alloy oxides thereof, especially oxide materials of ZnO, AZO, GZO, IGZO and IZO, and can also be widely used for etching oxide materials for making fine electronic components, such as semiconductor photoelectric devices, solar cells, TFT film transistors, semiconductor integrated circuits and transparent electrodes. Compared with traditional etching solutions, the novel etching solution has the advantages of lateral etching inhibition, uneven etching prevention and etching residual prevention.

Description

technical field [0001] The invention relates to a novel etching solution suitable for etching an oxide material system. More specifically, the present invention relates to an etching solution and an etching method suitable for etching oxide material systems such as In, Sn, Al, Ga, and Zn, which are mainly used for etching oxide materials in fine electronic components, For example, etching of oxide materials in optoelectronic semiconductor devices, semiconductor integrated circuits and transparent electrodes. Background technique [0002] Transparent Conductive Oxide (TCO) material technology is based on ITO, ZnO, In 2 o 3 , SnO 2 Transparent oxide semiconductor materials such as transparent oxide semiconductor materials and the doping system of the above oxides are the material basis, covering cutting-edge technologies in many fields such as material growth, device preparation, and equipment manufacturing. The technical fields include display, lighting, new materials, sem...

Claims

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Application Information

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IPC IPC(8): C09K13/06C09K13/00C09K13/12H01B13/00
Inventor 范冰丰王钢童存声
Owner FOSHAN INST SUN YAT SEN UNIV
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