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A kind of preparation method and device of gan pressure sensor

A pressure sensor, pressure technology, applied in the direction of piezoelectric device or electrostrictive device parts, device parts, the measurement of the property and force of the application of piezoelectric resistance materials, etc., can solve the difficult air tightness of GaN substrates Packaging and other issues to achieve high-quality airtight packaging and improve reliability

Active Publication Date: 2021-06-15
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a GaN pressure sensor preparation method and device to solve the problem in the prior art that GaN substrates are difficult to directly achieve high-quality hermetic packaging

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  • A kind of preparation method and device of gan pressure sensor
  • A kind of preparation method and device of gan pressure sensor
  • A kind of preparation method and device of gan pressure sensor

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Experimental program
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Embodiment 1

[0040] Please refer to figure 1 , GaN pressure sensor preparation method, comprising:

[0041] Step S101, bonding the first silicon wafer and the second silicon wafer to form a sealed cavity.

[0042] In this embodiment of the present invention, please refer to figure 2 (1) to figure 2 (3) Bonding the first silicon wafer 201 with the groove 202 and the second silicon wafer 203 through a bonding process to form a sealed cavity.

[0043] Optionally, the specific implementation of step S101 is: select two silicon wafers whose surfaces have been polished; wherein, the silicon wafers include a first silicon wafer and a second silicon wafer; The first silicon wafer is processed to form a groove; the first silicon wafer formed with the groove is bonded to the second silicon wafer through a bonding process to form the sealed cavity.

[0044] In the embodiment of the present invention, two first silicon wafers 201 and second silicon wafers 203 whose surfaces have been polished ar...

Embodiment 2

[0061] Please refer to image 3 , image 3 It is a cross-sectional view of the structure of the GaN pressure sensor. The GaN pressure sensor includes a sealed cavity, the upper surface of the sealed cavity is provided with a GaN film, and the GaN film is provided with a pressure sensitive unit; the GaN film includes a GaN buffer layer and a barrier layer; the sealed cavity includes The first silicon chip and the second silicon chip are provided with grooves; the pressure sensitive unit is a high electron mobility transistor device, a Wheatstone bridge circuit or a Schottky ring capacitor.

[0062] In the embodiment of the present invention, a sealed cavity is formed by bonding the first silicon wafer 201 with the groove 202 and the second silicon wafer 203 through silicon-silicon bonding, and a GaN buffer layer 205 and a barrier are arranged on the upper surface of the sealed cavity. For the GaN film in layer 206, the thickness of the GaN buffer layer is 2 μm, and the thickn...

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Abstract

The present invention is applicable to the field of semiconductor technology, and provides a GaN pressure sensor preparation method and device, including bonding the first silicon wafer and the second silicon wafer to form a sealed cavity; peeling off the GaN epitaxial layer on the substrate to form a GaN thin film ; Wherein, the GaN epitaxial layer includes a GaN buffer layer and a barrier layer from bottom to top; bonding the GaN thin film with a sealed cavity to form a pressure sensor substrate; forming a pressure sensitive unit on the GaN thin film. In the present invention, the GaN epitaxial layer is peeled from the substrate to form a GaN thin film through a laser lift-off process, and a groove is prepared on the first silicon wafer, and the first silicon wafer and the second silicon wafer are bonded to form a sealed cavity, and then the GaN The thin film is bonded to the sealed cavity, and the pressure sensitive unit is prepared on the GaN thin film to form a pressure sensor, thereby achieving high-quality airtight packaging and greatly improving the reliability of the sensor.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method and device of a GaN pressure sensor. Background technique [0002] At present, semiconductor pressure sensors are mainly based on Si materials, which are realized through the piezoresistive effect of silicon diffusion resistance. However, the temperature stability of the diffusion process is very poor, and the diffusion resistance and the isolation PN junction of the substrate will degenerate at high temperature, or even punch through, which will cause complete damage and failure. Due to the characteristics of the Si material, the pressure sensor based on the Si material can only work in an environment lower than 120°C. [0003] GaN has been proven to work at a maximum temperature of 600°C. In addition, GaN has many advantages such as high electron concentration, high electron mobility, and strong anti-radiation ability, so that it can wor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/04
CPCG01L1/18
Inventor 谭鑫吕元杰周幸叶宋旭波王元刚冯志红邹学锋徐森锋
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP