A method and system for extracting parameters of a nonlinear current model of a microwave gallium nitride device

Abstract

The invention discloses an extraction method and system for parameters of a non-linear current model used for a microwave gallium nitride device. The method comprises the following steps: acquiring amaximal drain electrode-source electrode current model according to static I-V test data of a to-be-extracted parameter device; obtaining a critical electric field model by extraction according to normal temperature static I-V curve and high-temperature pulse I-V test data of the to-be-extracted parameter device; obtaining a trap model according to normal temperature pulse I-V test data at different static offset points; and creating an integral non-linear current model according to parameters of the drain electrode-source electrode maximal current model, the critical electric field model andthe trap model. By adoption of the method or the system, physical significance and rationality of parameter dereferencing of parameters of the overall model are ensured. Therefore, impact of an artificial factor is reduced. The uniqueness of parameters of model is ensured. The defect of a conventional optimization algorithm such as the effect of multiple values for a parameter is overcome. The precision of the model is greatly increased. Meanwhile, the period of modeling of the device is greatly shortened.

Description

technical field [0001] The invention relates to the field of nonlinear current model parameter extraction, in particular to a method and system for extracting nonlinear current model parameters of a microwave gallium nitride device. Background technique [0002] The nonlinear current model, that is, the I-V model, is the core of the large signal model. Different from the traditional empirical base model, in order to accurately characterize the self-heating effect of GaN HEMTs operating under high operating voltage and high power conditions, the physical base model is usually found and The physical parameters that are strongly related to the channel temperature and the ambient temperature are based on the physical model to establish an analytical relationship, and then supplemented with a small amount of empirical parameters to correct the model accuracy. Therefore, the I-V model parameters of the entire physical-based GaN HEMT are relatively few, and most of the model parame...

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Problems solved by technology

However, the model lacks a step-by-step extraction method for specific parameters of self-heating and trap effects. It only points out the influence of model parameters on the simulation results. There is no set of algorithms that can automatically extract all parameters, and the influence of human factors cannot be avoided. ; In addition, there are still many fitting parameters in the physical base model, so the problem of multivalued parameters cannot be completely solved

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