Reflective Phase Shifter with Active Device Tuning
A phase shift and device technology, applied in the field of RF communication systems, can solve the problems of phase shifter characteristic impedance change and difficult matching, etc.
Active Publication Date: 2022-04-29
INFINEON TECH AG
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Problems solved by technology
A disadvantage of this type of phase shifter is that the characteristic impedance of the phase shifter changes and is therefore difficult to match
However, the size and bandwidth of reflective phase shifters determined by the characteristics of 3dB couplers limits their applicability
Method used
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[0015] Some embodiments of broadband compact phase shifters with low insertion loss are described herein. The phase shifter is configured as a reflective phase shifter, but with a smaller design and greater bandwidth than previous reflective phase shifter designs. The phase shifter includes a hybrid coupler and a phase tuning device. According to one embodiment, the hybrid coupler is provided by a lumped element network of high-Q inductors and capacitors. The phase tuning means connected to the output port of the hybrid coupler is configured to tune the reflected phase shift of the RF signal at the input port by changing the impedance at the output port of the hybrid coupler. According to one embodiment, the phase tuning means are provided by two laterally diffused metal oxide semiconductor (LDMOS) transistors. Advantageously, these devices can be configured as controllable capacitors / resistors, where the impedance is controlled by varying the drain-source voltage of the dev...
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A phase shifter comprising a first RF terminal and a second RF terminal, a reference potential terminal; a lumped element LC network connected to the first RF terminal and the second RF terminal and the reference potential terminal, and a lumped element LC network connected to the first RF terminal and the second RF terminal and the reference potential terminal The first active semiconductor device and the second active semiconductor device of the network and reference potential terminals. Each of the first and second active semiconductor devices includes a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first RF terminal and the second RF terminal, shifting the phase of the RF signal between the first RF terminal and the second RF terminal. The first active semiconductor device and the second active semiconductor device are configured to tune a phase shift of the RF signal by controlling a reactance across the first RF terminal and the second RF terminal.
Description
technical field [0001] This application relates to RF communication systems, and in particular to phase shifters. Background technique [0002] Phase shifters have a wide variety of uses in current and next generation communication systems. Phase shifters are used, for example, to adjust the transmission phase of RF signals in beamforming, in-phase modulation, and power amplifier circuits. Fifth generation (5G) wireless systems represent an emerging application for phase shifters. Fifth generation (5G) wireless systems use multiple antennas and phase offsets to simultaneously transmit and receive multiple RF signals and thereby achieve faster download speeds, greater bandwidth, spectral efficiency, lower latency, and the like. [0003] In general, phase shifters fall into two broad categories: active phase shifters and passive phase shifters. Passive phase shifters include only passive components (eg, inductors, transmission lines, etc.), while active phase shifters use a...
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IPC IPC(8): H03K19/0175
CPCH03K19/017545H03H11/20H01L29/7816H03H7/18H03H7/19H03H7/20
Inventor B·阿里功T·坎宁张海东F·特朗R·威尔逊周荣国
Owner INFINEON TECH AG