Charged particle beam device and sample processing method

Abstract

The present invention provides a charged particle beam device and a sample processing method capable of uniformly irradiating a charged particle beam to the entire micro sample piece with reduced sample thickness and clearly grasping the processing end point during processing. The charged particle beam device irradiates a charged particle beam toward a sample to produce a tiny sample piece, and is characterized in that the charged particle beam device has: a charged particle beam lens barrel capable of irradiating a charged particle beam toward the sample; a sample chamber, which accommodates the charged particle beam column; and a sample sheet holder, which can hold the sample. In the case of a sample piece, the portion adjacent to the thinned portion of the micro sample piece forms an inclined portion inclined relative to the thinned portion.

Description

technical field [0001] The present invention relates to a charged particle beam device for processing a sample using a charged particle beam and a sample processing method using the charged particle beam. Background technique [0002] For example, as one method of analyzing or stereoscopically observing the internal structure of a sample such as a semiconductor device, a cross-section processing observation method using a column equipped with a charged particle beam (Focused Ion Beam: FIB) and A charged particle beam recombination device of an electron beam (Electron Beam; EB) column performs FIB-based cross-section forming processing and a scanning electron microscope (Scanning Electron Microscope: SEM) to observe the cross-section (for example, refer to Patent Document 1). [0003] This cross-sectional processing observation method is known as a method of constructing a three-dimensional image by repeatedly performing cross-sectional forming processing by FIB and cross-sec...

AI Technical Summary

Problems solved by technology

Therefore, the processing time of the sample becomes longer, and there is also a possibility that a tiny sample piece of the desired shape cannot be produced.

[0011] In addition, when thinning a sample obtained by stacking a plurality of devices in the thickness direction on a semiconductor substrate, and counting the number of devices exposed by processing in order to grasp the processing end point, there is a possibility that the above-mentioned shadow Under the influence of the area, the contrast of the processing surface is reduced, and the number of equipment cannot be accurately counted, so that the processing end point cannot be accurately grasped

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