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Edge grinding base, edge grinding system and method based on Bernoulli's principle

An edge grinding and Bernoulli technology, applied in the field of edge grinding bases based on Bernoulli principle, can solve problems such as wafer backside damage, and achieve the effect of avoiding damage

Active Publication Date: 2020-09-22
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide an edge grinding base, an edge grinding system and a method based on Bernoulli's principle, which are used to solve the problem of wafer double-sided grinding in the prior art. The problem of damage to the back of the wafer due to direct contact between the wafer and the vacuum chuck during edge grinding

Method used

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  • Edge grinding base, edge grinding system and method based on Bernoulli's principle
  • Edge grinding base, edge grinding system and method based on Bernoulli's principle
  • Edge grinding base, edge grinding system and method based on Bernoulli's principle

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Embodiment 1

[0054] see figure 1 , the present invention provides an edge grinding base 1 based on the Bernoulli principle, the edge grinding base 1 based on the Bernoulli principle is used for edge grinding of the wafer to be ground, specifically, for the When the wafer to be ground is edge-ground, the wafer to be ground is adsorbed and fixed; the edge grinding base 1 based on Bernoulli's principle includes: a suction cup main body 11, and a cavity 111 is provided in the suction cup main body 11. The upper surface of the suction cup main body 11 is provided with several air outlets 112 communicating with the cavity 111 , and the bottom of the suction cup main body 11 is provided with an air supply pipeline 13 communicating with the cavity 111 . Bernoulli's principle, also known as the boundary layer surface effect, specifically refers to all fluids including gas. When the fluid velocity becomes faster, the pressure on the boundary between the object and the fluid will decrease; therefore,...

Embodiment 2

[0059] see figure 2 , the present invention also provides an edge grinding system, the edge grinding system includes: the edge grinding base 1 based on Bernoulli's principle as described in Embodiment 1, the edge grinding base based on Bernoulli's principle 1, please refer to Embodiment 1 for the specific structure, which will not be repeated here; the gas source (not shown), the gas source is communicated with the gas supply pipeline 13, and is suitable for supplying to the gas source based on the Bernoulli principle Adsorption gas is passed into the edge grinding base 1 to absorb the wafer 2 to be ground; the grinding device 3 is located at the periphery of the wafer 2 to be ground; the driving device (not shown), the driving device It is connected with the grinding device 3 and is suitable for driving the grinding device 3 to grind the edge of the wafer 2 to be ground.

[0060] As an example, the grinding device 3 may be, but not limited to, a grinding wheel.

[0061] As...

Embodiment 3

[0067] see Figure 4 , the present invention also provides a kind of edge grinding method, described edge grinding method comprises the steps:

[0068] 1) providing a wafer to be ground and an edge grinding system as described in Embodiment 2;

[0069] 2) transferring the wafer to be ground to the edge grinding system, and using the grinding device to clamp the wafer to be ground;

[0070] 3) using the grinding device to move the wafer to be ground to be adsorbed and fixed above the edge grinding base based on Bernoulli's principle;

[0071] 4) Using the grinding device to grind the edge of the wafer to be ground.

[0072] In step 1), see Figure 4 In the step S1, the wafer to be ground and the edge grinding system as described in the second embodiment are provided. For the specific structure of the edge grinding system, please refer to the second embodiment, which will not be repeated here.

[0073] In step 2), see Figure 4 In the S2 step, the wafer to be ground is tran...

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Abstract

The invention provides an edge grinding base based on the Bernoulli principle and an edge grinding system and method. The edge grinding base based on the Bernoulli principle comprises a sucking disc body which is internally provided with a cavity, the upper surface of the sucking disc body is provided with a plurality of air outlets communicating with the cavity, and the bottom of the sucking discbody is provided with an air supply pipe communicating with the cavity. When the edge grinding base based on the Bernoulli principle is used for conducting edge grinding on to-be-ground wafers, the Bernoulli effect can be achieved for absorbing and fixing the to-be-ground wafers, as a layer of gas exists between the edge grinding base based on the Bernoulli principle and the to-be-ground wafers to serve as buffer, the to-be-ground wafers are not in contact with the edge grinding base based on the Bernoulli principle, and the back faces of the to-be-ground wafers can be effectively prevented from being damaged.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an edge grinding base based on Bernoulli's principle, an edge grinding system and a method. Background technique [0002] Since the back of the wafer is not a polished surface but a frosted surface, in order to ensure particle performance, the wafer needs to be polished on both sides. If the double-sided polishing process is not performed on the wafer, after polysilicon back sealing and other treatments, since the particles are easily adsorbed on the rough surface, and the conventional wafer cleaning process is not easy to remove such adsorbed particle defects, the particles will stay on the back of the wafer . These residual particles will affect the subsequent process, thereby affecting the yield of the chip. Therefore, the backside of the wafer needs to form a damage-free polished surface. [0003] The current mainstream wafer manufacturing process is to do edge grin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B31/10B24B31/12B24B9/06
CPCB24B9/065B24B31/10B24B31/12
Inventor 刘源保罗·邦凡蒂
Owner ZING SEMICON CORP