Device for reducing edge heat loss of wafer
A heat loss, wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the electrical characteristics of the device, the junction depth distribution of doping elements cannot meet the requirements, etc., to reduce heat loss. , Reduce the temperature difference, the effect of stable yield
Inactive Publication Date: 2018-11-06
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
If the wafer temperature is slightly disturbed, the junction depth distribution of doping elements will not meet the requirements, which will affect the electrical characteristic parameters of the device.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0021] The annealing process is a key step in the thermal diffusion process. Annealing is the process of rapidly raising the wafer to a certain temperature, such as 900°C to 1200°C, and then rapidly cooling down. During the annealing process, the wafer temperature needs to be precisely controlled. However, if figure 1 As shown, the tray 110 is generally a hollow structure, including a tray ring 111 and a hole 112. The tray ring 111 and the hole 112 form a hollow structure. The edge of the wafer 100 is placed on th...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a device for reducing edge heat loss of a wafer, and relates to integrated circuit manufacturing technology. The device comprises the wafer, a tray, a tray temperature detection unit, a comparison calculation unit, a heat source controller and a heat source device. The tray comprises a hollow structure formed by a tray ring and a hole, the edge of the tray is arranged on the tray ring to bear the wafer, and the center part of the wafer is arranged on the hole. The tray temperature detection unit is used for detecting the temperature of the tray ring to output a tray temperature signal representing the temperature of the tray. The comparison calculation unit receives the tray temperature signal and a reference temperature signal to output a temperature deviation signal representing the deviation between the tray temperature signal and the reference temperature signal. The heat source controller receives the temperature deviation signal and outputs a temperaturecontrol signal according to the temperature deviation signal. The heat source device controls the heat irradiating the tray ring according to the temperature control signal to control the temperatureof the tray ring.
Description
technical field [0001] The invention relates to an integrated circuit manufacturing technology, in particular to a device for improving edge heat loss of a wafer. Background technique [0002] In the manufacture of integrated circuits, doping is an important process, which is to change the conductivity type of semiconductors, form N-type layers or P-type layers, to form PN junctions and various semiconductor devices, thereby forming semiconductor integrated circuits, or changing The conductivity of the material. Thermal diffusion is a common method of doping, which uses high temperature to drive impurities into the semiconductor crystal lattice and diffuse impurities in the semiconductor substrate. This method is highly dependent on temperature. A slight disturbance of the wafer temperature can cause the junction depth distribution of doping elements to fail to meet the requirements, thereby affecting the electrical characteristic parameters of the device. However, with th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/683
CPCH01L21/67098H01L21/67248H01L21/683
Inventor 谢威赖朝荣王智
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD