Terminal for semiconductor power device

Abstract

The invention provides a terminal for a semiconductor power device. The terminal for the semiconductor power device comprises a collector electrode, a base region, a plurality of annular field limiting rings and a plurality of metal field plates corresponding to the field limiting rings, wherein the field limiting rings are arranged at intervals; the intervals between two adjacent field limiting rings are equal; the field limiting rings comprise a plurality of main bending parts and a plurality of main straight parts; the main bending parts are positioned between two adjacent main straight parts; the widths of the main bending parts decrease gradually along the middles of the main bending parts to two sides; the widths of the main bending parts of the field limiting rings are larger than the widths of the main straight parts of the corresponding field limiting rings; and the widths of the main bending parts increase gradually from sides close to geometric centers of the field limitingrings to sides far away from the geometric centers of the field limiting rings. Through adoption of the terminal for the semiconductor power device provided by the invention, the electric field spikesat corners can be reduced, and the stability and reliability of the semiconductor power device are enhanced.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor devices, in particular to a terminal for semiconductor power devices. 【Background technique】 [0002] The terminal (Insulated Gate Bipolar Transistor, IGBT) used for semiconductor power devices is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It has the advantages of unipolar devices and bipolar devices, and its driving circuit is simple, the power consumption and cost of the control circuit are low, and the on-state voltage is low. It has become one of the mainstream power semiconductor devices. [0003] However, since the field limiting ring and the field plate of the terminal of the IGBT are ring structures, that is, the four corners of the chip are all curved, so there is a curvature effect at the four corners of the chip. Due to the curvature effect, the electric field at th...

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Problems solved by technology

[0003] However, since the field limiting ring and the field plate of the terminal of the IGBT are ring structures, that is, the four corners of the chip are all curved, so there is a curvat

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