Quantum dot light-emitting diode and preparation method thereof and display panel

A quantum dot light-emitting and diode technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing device fabrication cost, difficult to control layer thickness, poor repeatability, etc., to improve device luminous efficiency, reduce Electron transport or injection, the effect of saving the cost of preparation

Active Publication Date: 2018-11-06
BOE TECH GRP CO LTD
View PDF5 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Whether it is adding an insulating layer or adding a hole transport layer material, another layer is added on the basis of the original device, and the layer thickn

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light-emitting diode and preparation method thereof and display panel
  • Quantum dot light-emitting diode and preparation method thereof and display panel
  • Quantum dot light-emitting diode and preparation method thereof and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] This embodiment provides a quantum dot light-emitting diode. By doping one or more substances that can capture carriers in the electron transport layer, the electron injection of the trans-structure quantum dot light-emitting diode can be effectively improved, and the electron transport can be improved. rate, to obtain a higher device luminous efficiency.

[0048] Such as figure 1 As shown, the quantum dot light-emitting diode is a top-emitting (Top-emitting) inverted structure (Inverted Structure) or trans-structure, including sequentially stacked cathode 1, electron transport layer 2, light-emitting layer 3, hole transport layer 4 and anode 5. Correspondingly, the preparation method of the quantum dot light-emitting diode includes the steps of forming a cathode 1, an electron transport layer 2, a light emitting layer 3, a hole transport layer 4 and an anode 5, and the electron transport layer 2 includes a substance capable of capturing carriers , substances capable ...

Embodiment 2

[0057] This embodiment provides a quantum dot light-emitting diode. By doping one or more substances that can capture carriers in the electron transport layer, a top-emitting quantum dot light-emitting diode can be prepared by the full solution method, which can effectively improve the trans The electronic injection of the structural quantum dot light-emitting diode improves the electron transport rate and obtains a higher device luminous efficiency.

[0058] The structure reference of the quantum dot light-emitting diode in this embodiment figure 1 , the process of preparing the quantum dot light-emitting diode by the whole solution method is as follows:

[0059] Step S1): Perform pretreatment on the substrate as the cathode: the pretreatment includes cleaning and plasma treatment.

[0060] Cleaning: The substrate is made of ITO or FTO. Since there are usually some dust and organic matter on the surface of the newly purchased or manufactured substrate, it is necessary to per...

Embodiment 3

[0090] This embodiment provides a quantum dot light-emitting diode. By doping one or more substances that can capture carriers in the electron transport layer 2, a top-emitting quantum dot light-emitting diode can be prepared by the full solution method, which can effectively improve the reflection efficiency. The electronic injection of the quantum dot light-emitting diode with the formula structure improves the electron transmission rate and obtains a higher device luminous efficiency.

[0091] The difference between this example and Example 2 lies in the difference in the method for preparing the anode 5. In Example 2, the PEDOT:PSS film is obtained by spin coating. In this example, the PEDOT:PSS film is transferred to the device through the PDMS intermediate medium by transfer printing technology. .

[0092] For the preparation method of the quantum dot light-emitting diode of this embodiment, the pretreatment of the substrate and the pretreatment of the materials of each ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of display and particularly relates to a quantum dot light-emitting diode and a preparation method thereof and a display panel. The preparation method of the quantum dot light-emitting diode comprises the step of forming a cathode, an electron transport layer, a light-emitting layer, a hole transport layer and an anode, wherein the electron transport layer comprises substances capable of trapping carriers; and the substances capable of trapping the carriers include an N-type metal oxide and a quantum dot material containing a hydroxyl group in a surface ligand. According to the quantum dot light-emitting diode, electron transportation or injection can be effectively reduced through doping one or more substances capable of trapping the carriers into the electron transport layer, and the device light-emitting efficiency of the quantum dot light-emitting diode is obviously improved; meanwhile, the whole structure is prepared by adopting PEDOT:PSS PH1,000 with high conductivity as a transparent anode and adopting an all-solution process (All-solution-processed), so that adoption of a high vacuum coating machine is avoided and the preparationcost of a device is reduced.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light emitting diode, a preparation method of the quantum dot light emitting diode, and a display panel. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED for short) have the characteristics of low energy consumption, high brightness, high color purity, and easy flexibility. They are the core devices of the next-generation display technology. Compared with the formal structure QLED, the cathode of the inverted structure QLED can be directly connected to the drain of the Thin Film Transistor (TFT) as the control device, which is currently the most promising device structure for commercialization. [0003] In current quantum dot light-emitting diodes, the energy level barrier (<0.5eV) between the electron transport layer and the light-emitting layer is lower than the potential barrier (>1eV) between the hole transport layer and t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/50H01L51/56H01L27/32
CPCH10K59/00H10K50/16H10K71/00H10K50/115H10K2102/331H10K50/15
Inventor 张欣钟海政常帅
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap