Operating method for P channel flash memory unit

An operation method and flash memory cell technology, which are applied in the field of integrated circuit manufacturing, can solve the problem that the performance of P-channel flash memory needs to be improved, etc., and achieve the effects of area shrinkage, device area reduction, and high impact ionization rate.

Active Publication Date: 2018-11-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the development of electronic products, there are higher and higher requirements for the performance of flash memory, and the performance of the existing P-channel flash memory still needs to be improved

Method used

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  • Operating method for P channel flash memory unit
  • Operating method for P channel flash memory unit

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Embodiment Construction

[0029] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0030] Please refer to figure 1 , the present embodiment provides a method for operating a P-channel flash memory unit with a single storage bit, and the P-channel flash memory unit includes: a semiconductor substrate 100, an N well 101, a first P-type doped region 115a, a second P-type type doped region 110, the first word line gate 108a and the first storage bit P1. Wherein, the semiconductor substrate 100 is P-type doped, the N well 101 is formed in the semiconductor substrate 100, and the first P-type doped region 115a and the second P-type doped region 110 are both formed in the semiconductor substrate 1...

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Abstract

The invention provides an operating method for a P channel flash memory unit. Corresponding negative voltage is separately applied to a control gate on a storage bit as well as a corresponding word line gate and a corresponding P-type doping region, 0V voltage is applied to an N well and a second P-type doping region, and voltage difference between the two P-type doping regions generates strong electric fields; under action of the strong electric fields, a hole in the P channel obtains high energy to generate high-speed collision with a silicon crystal lattice to generate high-energy electrons, and some high-energy electrons enter a floating gate under action of the electric fields generated by voltage of the control gate, so that programming operation is achieved; positive voltage is further applied to the word line gate corresponding to the storage bit, and negative voltage is applied on the control gate on the storage bit, so that an FN tunneling effect is generated, and therefore,the purpose of quick wiping is realized; and negative voltage is applied to the P-type doping region corresponding to the storage bit and the word line gate, and 0V voltage is applied to the control gate, the N well and the second P-type doping region, so that quick reading of information is realized.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a P-channel flash memory unit and an operation method thereof. Background technique [0002] Flash memory (Flash memory), also known as flash memory, is a non-volatile memory on which data can be saved even after the power of the device is turned off, allowing data to be written, read, and Erase has been widely used in various electronic devices. The flash memory unit is the storage unit, which is the core part of the flash memory and determines the performance of the flash memory. The traditional flash memory uses an N-channel flash memory unit. This N-channel flash memory unit works in the current saturation range, resulting in high power consumption and programming The slow speed and poor durability of the device are seriously contrary to the performance requirements of the flash memory in today's market. As a result, flash memory using P-channel flash memory c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/26G11C16/34
CPCG11C16/10G11C16/26G11C16/34
Inventor 徐涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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