Mark point graph structure for easy laser marking and preparation method thereof

A technology of laser marking and dot graphics, which is applied in the field of laser marking, can solve the problems of easy repeated marking damage to silicon wafers, affecting production line production capacity, and consumption, so as to shorten production time, increase enterprise income, and increase production capacity. Effect

Inactive Publication Date: 2018-11-16
TONGWEI SOLAR (ANHUI) CO LTD
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Problems solved by technology

[0004] The conventional alignment of Mark points to create graphics is a set of concentric circles, as shown in the manual figure 2 As shown, although this graphic can realize circular mark points, the disadvantage is that it is easy to repeatedly mark and damage silicon wafers, and it takes 0.5s to make mark points at the same time, which seriously affects the production line capacity

Method used

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  • Mark point graph structure for easy laser marking and preparation method thereof
  • Mark point graph structure for easy laser marking and preparation method thereof
  • Mark point graph structure for easy laser marking and preparation method thereof

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Embodiment Construction

[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0017] see Figure 1-3 , the present invention provides a technical solution:

[0018] A graphic structure of Mark dots for laser marking, including Mark dots 2, which are in a spiral shape.

[0019] The helical Mark point 2 is used in monocrystalline PERC superimposed selective emitter technology.

[0020] The invention discloses a method for preparing a Mark point graphic structure convenient for laser marking, adjusting laser parameters, and lasering spir...

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Abstract

The invention discloses a Mark point graph structure for easy laser marking; the Mark point graph structure comprises Mark points in a spiral form; the Mark point is used for monocrystalline PERC superposing with the selective emitter technology; a preparation method adjusts laser parameters, and lasers spiral Mark points on four corners of a silicon chip. The Mark point graph is a spiral graph, and can prevent problems encountered by a normal concentric circle graph; the spiral new graph can be fully compatible with existing laser doped equipment without increasing any cost, and is good in industrialization production process stability; the making time of the Mark point graph structure is 0.1-0.2s, thus shortening the whole SE structure making time, improving the production power, and increasing enterprise incomes; the Mark point graph structure and the making method are worthy of promotion.

Description

technical field [0001] The invention relates to the technical field of laser marking, in particular to a Mark dot graphic structure convenient for laser marking and a preparation method thereof. Background technique [0002] With the development of crystalline silicon battery science and technology, PERC battery has gradually become the mainstream of the market. In the next few years of development, PERC battery and PERC superimposed new technology battery will gradually mature and move towards industrial production. PERC superimposed SE technology is an effective The technical path to improve battery efficiency is also a technical means that is easy to implement and low in cost. The superimposed SE technology is realized by laser doping technology, and the laser doping pattern Mark point is a key to this technology. point. [0003] In the selective emitter structure made by laser, it is necessary to print the alignment mark points of the battery during printing. Generally,...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L23/544
CPCH01L23/544H01L31/18Y02P70/50
Inventor 吴俊旻张鹏常青谢耀辉余波张冠纶
Owner TONGWEI SOLAR (ANHUI) CO LTD
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