Light-emitting element, light-emitting element array and light-emitting device thereof

Abstract

The invention provides a light-emitting device, having a substrate including a control circuit, wherein the light-emitting device includes a light-emitting element, and the light-emitting element hasa semiconductor layer sequence that includes a first type semiconductor layer, a second type semiconductor layer and an active light-emitting layer between the first type semiconductor layer and the second type semiconductor layer; the light-emitting device has a sacrificial structure, the light-emitting element is connected to the control circuit of the substrate, the light-emitting element has adopted or will adopt a process of laser stripping substrate, and the sacrificial structure prevents the light-emitting element from being damaged caused by too large peeling impact force when the substrate is being peeled off.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a light emitting element, an array of light emitting elements and a light emitting device thereof. Background technique [0002] Conventional thin-film LED chip structure, when using laser to peel off the sapphire substrate, there are following problems, such as: when the sapphire substrate is peeled off, there will be a pulling phenomenon at the edge of the chip, so that the epitaxial layer is pulled and broken, and the cracks may extend to When the sapphire substrate is peeled off, due to the extremely high internal stress of GaN, part of the epitaxial layer at the edge has no support structure, which causes collapse and fragmentation, and the cracks may extend into the chip structure and cause destroy. Contents of the invention [0003] The present invention proposes a feasible solution to the problems in the background technology, through which a high...

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Problems solved by technology

[0002] Conventional thin-film LED chip structure, when using laser to peel off the sapphire substrate, there are following problems, such as: when the sapphire substrate is peeled off, there will be a pulling phenomenon at the edge of the chip, so that the epitaxial layer is pulled and broken, and the cracks may extend to When the sapphire substrate is peeled off, due to the extremely high internal stress of GaN, part of the epitaxial layer at the edge has no support structure, which causes collapse and fragmentation, and the cracks may extend into the chip structure and cause destroy

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