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Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

一种器件制造方法、光刻的技术，应用在照相制版工艺曝光装置、光机械设备、微光刻曝光设备等方向，能够解决覆盖误差、晶圆不平坦、期望覆盖误差等问题

Active Publication Date: 2018-11-23
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] When the unevenness between the reference layer and the current layer is different, overlay errors are expected at the affected locations, which are not corrected by the existing alignment model
[0010] Published International Patent Application WO2015104074A1 further explains how wafer unevenness can introduce distortion (positional deviation) in the plane of the substrate, potentially leading to overlay errors
When the lithographic setup is one that applies the pattern by imaging, local height variations also lead to focus errors

Method used

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  • Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product
  • Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product
  • Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

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Embodiment Construction

[0039] Before describing embodiments of the invention in detail, it is advantageous to present an exemplary environment in which embodiments of the invention may be implemented. figure 1 A lithographic apparatus LA is schematically shown. The apparatus includes: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or EUV radiation); a reticle support (e.g., a mask table) MT configured to support patterning a device (e.g., a mask or a reticle) MA, and is connected to a first positioner PM configured to precisely position the patterning device according to certain parameters; a substrate support (e.g., a wafer stage ) WTa or WTb, configured to hold a substrate (e.g., a photoresist-coated wafer) W, and connected to a second positioner PW configured to precisely position the substrate W according to certain parameters and a projection system (e.g., an illuminating projection lens system) PS configured to project a pattern imparte...

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Abstract

A lithographic process includes clamping (CL) a substrate (W) onto a substrate support (WT), measuring (AS) positions of marks across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction (WCOR) is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic(402, 404, 406) in the positions measured across the substrate. In one embodiment the correction is generated by firstly inferring one or more shape characteristics of the warped substrate (FFW) using the measured positions and other information (CDAT). Then, based on the inferred shape characteristics, a clamping model is applied (WCM) to simulate deformation of the warped substrate in responseto clamping. Thirdly said correction (LCOR) is calculated based on the simulated deformation. Some or all of these steps may be integrated and / or implemented by a look-up table.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to EP application 16156361.4 filed on 18 February 2016 and EP application 17152954.8 filed on 25 January 2017, the entire contents of which are incorporated herein by reference. technical field [0003] The invention relates to a photolithography device. The invention also relates to a method of manufacturing a device using such a lithographic apparatus, and to a data processing apparatus and a computer program product for carrying out parts of such a method. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern on a substrate, usually on a target portion of the substrate. For example, lithographic apparatus can be used to fabricate integrated circuits (ICs). In this case, a patterning device (alternatively referred to as a mask or reticle) can be used to generate the circuit pattern to be formed on the various layers of the IC. The patte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G03F7/20
CPCG03F7/70258G03F7/70633G03F7/70783G03F9/7011G03F9/7034
Inventor H·E·切克利M·伊什巴士L·P·范迪克R·J·F·范哈伦柳星兰R·M·琼格布拉特C·M·阿芬陶诗艾格R·H·J·奥腾
Owner ASML NETHERLANDS BV