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Content addressable memory unit based on memristor and CMOS and data search matching method

A technology of storage unit and memristor, which is applied in the field of memory, can solve the problems of large number of transistor devices, small data storage density, and large device size, and achieve the effects of large storage space, low static power consumption, and low static power consumption

Active Publication Date: 2018-12-07
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a content addressable storage unit based on memristor and CMOS, read and write and data search and matching methods based on memristor with voltage threshold characteristics, aiming to solve the problems in the prior art due to traditional CMOS-based The number of transistor devices used in the content addressable memory unit is large, the technical problems of low data storage density and high energy consumption caused by large device size

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  • Content addressable memory unit based on memristor and CMOS and data search matching method
  • Content addressable memory unit based on memristor and CMOS and data search matching method
  • Content addressable memory unit based on memristor and CMOS and data search matching method

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by...

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Abstract

The invention discloses a content addressable memory unit based on memristors and CMOS transistors, reading / writing operation, and a data search matching method therefor. Through the resistive randomand nonvalatile features of the memristor, the content addressable memory unit is formed from two memristors and two CMOS transistors in a special connection mode. A content addressable unit inheritsthe advantages, such as small size, low power consumption and strong expansibility, of the memristors. Compared with a conventional content addressable memory unit, the content addressable memory unitsupplies a larger storage space and achieves simpler reading / writing operation and data search matching operation. The invention provides a new idea for design of the content addressable memory. Thecontent addressable memory unit is composed of the memristors and transistors, so that the reading / writing operation and data search matching operation are achieved by applying different working voltages to input / output lines of the unit; the content addressable memory unit is simple and requires fewer steps in the reading / writing operation.

Description

technical field [0001] The invention belongs to the field of memory, and more specifically relates to a content-addressable storage unit based on a memristor and a CMOS, and a method for reading, writing, and data searching and matching. Background technique [0002] In 1971, Cai Shaotang first theoretically proved the possibility of the existence of the fourth basic circuit device memristor. Memristor is a basic circuit device other than inductors, capacitors and resistors. It is a two-terminal device. A device can be defined by flux and charge. Later, Cai Shaotang and others proposed the basic characteristics of the memristor and gave a description of its nonlinear dynamics. It was not until 2008 that researchers at the Hewlett-Packard Laboratory in the United States produced the actual memristor device for the first time, and gave experimental analysis and mathematical models, that the research on memristors gradually attracted widespread attention. Based on the resisti...

Claims

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Application Information

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IPC IPC(8): G11C16/04
CPCG11C16/0483
Inventor 王小平李帅
Owner HUAZHONG UNIV OF SCI & TECH
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