Multi-state program using controlled weak boosting for non-volatile memory

A technology of memory cells and memory arrays, which is applied in the field of memory and can solve problems such as long time

Active Publication Date: 2018-12-07
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although multi-state non-volatile memory is capable of storing more data states than binary non-volatile memory, the process of programming and verifying programming for multi-state non-volatile memory may take longer

Method used

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  • Multi-state program using controlled weak boosting for non-volatile memory
  • Multi-state program using controlled weak boosting for non-volatile memory
  • Multi-state program using controlled weak boosting for non-volatile memory

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Embodiment Construction

[0037] In multi-state programming, where memory cells are programmed to multiple target states simultaneously, a typical program operation for NAND memory sets selected bit lines to ground and unselected bit lines to a program inhibit voltage; line is raised from ground to Vpass; a programming pulse is then applied to the selected word line of the bias array. Since all cells are programmed at about the same rate, this means that the lowest state can complete earlier than the highest state. For example, in a four-bit-per-cell arrangement, programming of the lowest state can be done after about, say, twelve pulses, while the highest state can take as much as 40 pulses.

[0038] The technique described below allows all cells to be programmed with about the same number of pulses, regardless of the target state, so that they all complete in, say, 12 pulses. This is done using a biasing process of the array prior to applying a pulse to the selected word line, during which the chann...

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Abstract

Multi-state programming of non-volatile memory cells, where cells being programmed to different target states are programmed concurrently, is performed by modulating the program speed of each state using a controlled amount of state-dependent weak boosting in their respective channels. In one example, the channel boosting is controlled by using a multi-stair word line ramp in conjunction with raising of the voltage on bit lines at a time based on the corresponding memory cell's target state.

Description

technical field [0001] This application relates to the field of memory. Background technique [0002] Semiconductor memory is widely used in various electronic devices, such as cellular telephones, digital cameras, personal digital assistants, medical electronics, mobile computing devices, and non-mobile computing devices. Semiconductor memory may include nonvolatile memory or volatile memory. Nonvolatile memory allows information to be stored and retained even when the nonvolatile memory is not connected to a power source, such as a battery. Examples of non-volatile memory include flash memory (such as NAND type and NOR type flash memory) and Electrically Erasable Programmable Read-Only Memory (Electrically Erasable Programmable Read-Only Memory, EEPROM). [0003] Charge-trapping materials can be used in non-volatile memory devices to store voltages representing data states. Charge-trapping materials can be vertically arranged in a three-dimensional (3D) stacked memory s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/08G11C16/10G11C16/24
CPCG11C16/08G11C16/10G11C16/24G11C11/5628G11C16/32G11C16/3481G11C2211/5622G11C16/3459G11C16/0483G11C16/26
Inventor D.杜塔X.苗M.马苏杜扎曼
Owner SANDISK TECH LLC
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