Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing SiC crystal

A crystal and seed crystal technology, applied in the field of SiC crystal manufacturing, can solve the problems of 200mm substrate obstruction and lack of device progress

Inactive Publication Date: 2018-12-11
孙月静
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the progress of SiC-based devices is still hampered by the lack of commercially available high-quality 150mm SiC substrates and the lack of 200mm substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0006] Disclosed herein is a method of fabricating a SiC single crystal comprising: (a) growing a SiC single crystal by sublimation on the surface of a seed crystal in the presence of a temperature gradient while controlling said gradient to achieve a substantially shallow radial crystal and a gradient around it; (b) in step (a), controlling the flux of the SiC-containing vapor by confining said flux substantially to the central region of the seed surface.

[0007] A SiC sublimation growth system comprising: a growth crucible configured to be charged with a SiC source material and SiC seeds in a spaced relationship; a separation plate separating the growth crucible into source chambers where the SiC source material resides when the growth crucible is loaded with the SiC source material The source region and the crystallization chamber where the SiC seeds are located, when the growth crucible is equipped with SiC seeds, wherein: the partition plate includes a first central part ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is a method for manufacturing a SiC single crystal. A main novel aspect of the method for manufacturing the SiC single crystal is to control vapor transport and temperature gradients, wherein the transport is confined to a central region of a growing crystal while the crystal and surroundings are under near zero radial temperature gradient conditions. This results in a favorable shaped growth interface, such as flat or slightly convex toward the source, reduced crystal stress and reduced crystal defect density. Other novel aspects of the method for manufacturing the SiC single crystal comprise in-situ densification of the SiC source through sublimation and filtration vapor from particles derived from the SiC source.

Description

[0001] The invention relates to the technical field of SiC production, in particular to a method for manufacturing SiC crystals. Background technique [0002] Significant progress has been made in SiC crystal growth and substrate fabrication in the past decade. Currently, the largest commercially available SiC substrates are 4H and 6H SiC wafers with a diameter of 100mm. 150mm substrates are under development and, recently, limited quantities of 150mm n-type substrates have been available for trial or sampling. The widespread implementation of 150mm diameter SiC substrates, and in the future, 200mm substrates will lead to a significant reduction in the cost of SiC and GaN based semiconductor devices. [0003] Development grade 150mm n-type wafers are known in the art. However, the progress of SiC-based devices is still hindered by the lack of commercially available high-quality 150mm SiC substrates and the lack of 200mm substrates. Detrimental defects in SiC substrates incl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/36C30B23/02
CPCC30B23/005C30B23/02C30B29/36
Inventor 孙月静
Owner 孙月静