A solar cell and a preparation method thereof

A solar cell and electrode technology, applied in the field of solar cells, can solve problems such as the reduction of open circuit voltage, the influence of passivation effect, the influence of solar cell conversion efficiency, etc., to achieve the effect of increasing open circuit voltage, reducing metal recombination rate, and improving virtual fill factor

Pending Publication Date: 2018-12-11
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During the high-temperature sintering process, the metal paste will penetrate the polysilicon film and have a certain destructive effect on the oxide layer between the silicon substrate and the polysilicon film, which will have a certain impact on its passivation effect, resulting in a decrease in the open circuit voltage
[0004] The technical solutions disclosed in patent documents CN205564789U, CN2

Method used

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  • A solar cell and a preparation method thereof
  • A solar cell and a preparation method thereof
  • A solar cell and a preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Such as figure 1 As shown, the solar cell provided by this embodiment includes a silicon substrate 1, and a selectively doped region 2 is arranged in the silicon substrate 1. The selectively doped region 2 includes a doped region 21 and an undoped region 22. The selectively doped A passivation medium layer 3 is provided on the surface of the impurity region 2 , a polysilicon film 4 is provided on the passivation medium layer 3 , and a metal contact electrode 5 is provided on the polysilicon film 4 at a position corresponding to the doped region 21 .

[0071] The polysilicon film 4 is a doped polysilicon film, and the doping element in the doped region 21 is the same as that in the doped polysilicon film, and the doping element is phosphorus.

[0072] The doping concentration of the doping element in the doping region 21 is 1.0E 18 atoms / cm 3 ~1.0E 20 atoms / cm 3 , The doping depth is 0.1-2 μm.

[0073] Doped regions 21 and non-doped regions 22 are alternately distri...

Embodiment 2

[0087] Such as figure 2 As shown, the solar cell provided by this embodiment includes a silicon substrate 1, and a selectively doped region 2 is arranged in the silicon substrate 1. The selectively doped region 2 includes a doped region 21 and an undoped region 22. The selectively doped A passivation dielectric layer 3 is provided on the surface of the impurity region 2, a polysilicon film 4 is provided on the passivation dielectric layer 3, a passivation layer 6 is also provided on the polysilicon film 4, and a passivation layer 6 is doped with A metal contact electrode 5 is provided at a position corresponding to the region 21 .

[0088] The polysilicon film 4 is a doped polysilicon film, and the doping element in the doped region 21 is the same as that in the doped polysilicon film, and the doping element is phosphorus.

[0089] The doping concentration of the doping element in the doping region 21 is 1.0E 18 atoms / cm 3 ~1.0E 20 atoms / cm 3 , The doping depth is 0.1-2 ...

Embodiment 3

[0112] For the structure of the solar cell of this embodiment, refer to Embodiment 2.

[0113] The preparation method of the solar cell is based on chemical oxidation to prepare an ultra-thin oxide layer (SiO 2 ), the doping of the underlying silicon substrate is achieved by annealing after phosphorus implantation, and the entire process step requires separate annealing of the silicon substrate and polysilicon film doping.

[0114] Such as Figure 7 Shown, the preparation method of this solar cell specifically comprises the following steps:

[0115] A. Select the silicon substrate 1, after cleaning, use the mask plate (mask) that comes with the ion implanter to implant at one time, and the phosphorus (P) doping dose is 1E 15 atoms / cm 2 ;

[0116] B. Annealing: use a temperature of 900°C to activate the doped phosphorus (P) by furnace annealing to form a doped region 21 and a non-doped region 22;

[0117] C. Low-temperature furnace tube growth passivation medium layer: aft...

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Abstract

The invention discloses a solar cell including a silicon substrate, A selectively doping region is arranged in the silicon matrix, The selective doping region comprises a doping region and a non-doping region. A passivation dielectric layer is arranged on the surface of the selective doping region, a polysilicon film is arranged on the passivation dielectric layer, and a metal contact electrode isarranged on the polysilicon film and at a position corresponding to the doping region. By selectively locally doping the silicon substrate underneath the metal contact, the damage to the ultra-thin passivation dielectric layer in the metal contact region can be effectively reduced, and the electric performance of the battery can be better exerted. The invention also discloses a preparation methodof the solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell and a preparation method thereof. Background technique [0002] In order to obtain high efficiency of crystalline silicon solar cells, the surface of the crystalline silicon substrate must have good passivation to control the surface recombination rate of minority carriers to a minimum, so as to obtain higher opening voltage, current and fill factor. The common method of silicon surface passivation is to use silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide and other single-layer or multi-layer dielectric film structures to suppress the surface recombination rate by reducing the concentration of dangling bonds on the surface of the silicon substrate. However, in order to extract the current, the metal electrode must pass through the passivation dielectric film and contact the silicon-based surface. At this time, the passivation film i...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0216
CPCH01L31/02167H01L31/035272Y02E10/50
Inventor 张俊兵陈孝业何自娟
Owner JA SOLAR TECH YANGZHOU
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