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A high dynamic infrared image sensor readout circuit and its signal acquisition method

A technology for reading out circuits and infrared images, used in image communication, television, electrical components, etc., can solve the problems of low dynamic range and poor output image effect, and achieve the effect of improving dynamic range

Active Publication Date: 2020-12-25
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The readout circuit of the infrared image sensor converts the photogenerated current into a voltage change output, but the final output voltage of the readout circuit in the prior art has a linear relationship with the photogenerated current, and its dynamic range is not high
The readout circuit with this linear relationship needs to adjust its photosensitive range according to the scene when it is applied, and the output image effect is not good in scenes with large environmental changes

Method used

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  • A high dynamic infrared image sensor readout circuit and its signal acquisition method
  • A high dynamic infrared image sensor readout circuit and its signal acquisition method
  • A high dynamic infrared image sensor readout circuit and its signal acquisition method

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Embodiment Construction

[0018] In order to make the purpose, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0019] as attached figure 1 As shown, a high dynamic infrared image sensor readout circuit in the present invention includes a photosensitive current generation module 1 and a current-voltage conversion module 2, and the photosensitive current generation module is used to convert the impedance change of the infrared photosensitive element into a current change, and the current - The voltage conversion module is used to convert the photo-generated current into an output voltage.

[0020] Wherein, the photosensitive current generating module includes an infrared photosensitive element, an operational amplifier, a first NMOS transistor NM1, a second NMOS transistor NM2, a third NMOS transistor NM3, a first PMOS transistor PM1, ...

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Abstract

The invention discloses a high dynamic infrared image sensor readout circuit and a signal acquisition method thereof. The infrared image sensor readout circuit includes a photosensitive current generation module and a current-voltage conversion module, and the photosensitive current generation module is used to convert an infrared photosensitive element The impedance change of the sensor is converted into a current change, and the current-voltage conversion module is used to convert the photo-generated current into an output voltage. The invention provides a readout circuit of a high dynamic infrared image sensor and a signal acquisition method thereof, so that the output voltage of the readout circuit and the photogenerated current have a logarithmic relationship, thereby improving the dynamic range of the output voltage.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a high dynamic infrared image sensor readout circuit and a signal acquisition method thereof, Background technique [0002] Due to its special performance of night vision and temperature measurement, infrared image sensor is widely used in military, industrial and monitoring fields. At present, with the advancement of technology, the industry of uncooled infrared image sensors has been greatly developed. [0003] The readout circuit of the infrared image sensor converts the photogenerated current into a voltage change output, but the final output voltage of the readout circuit in the prior art has a linear relationship with the photogenerated current, and its dynamic range is not high. The readout circuit with this linear relationship needs to adjust its photosensitive range according to the scene when it is applied, and the image output effect is not good in scenes with large...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/33H04N5/374H04N5/378
CPCH04N5/33H04N25/76H04N25/75
Inventor 段杰斌李琛蒋宇王修翠
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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