Electrostatic discharge protection structure and method of forming the same
An electrostatic discharge protection and electrostatic discharge technology, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems that the electrostatic discharge protection structure is difficult to play a protective role, it is difficult to meet the requirements of the chip electrostatic discharge protection function, and the trigger voltage is high.
Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the trigger voltage of the existing electrostatic discharge protection structure is often too high, which makes it difficult for the electrostatic discharge protection structure to play its protective role and meet the requirements of the electrostatic discharge protection function of the chip.
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[0036] It can be seen from the background art that the ESD protection structure in the prior art has the problem of too high trigger voltage. Now combine an electrostatic discharge protection structure to analyze the cause of the excessive trigger voltage problem:
[0037] refer to figure 1 , shows a schematic cross-sectional structure diagram of an electrostatic discharge protection structure.
[0038] The electrostatic discharge protection structure includes: a substrate 11 with a P-type well region 12 in the substrate 11; a gate structure 13 located on the substrate 11; a source region 14 and a drain region 15 respectively located on the In the P-type well region 12 in the substrate 11 on both sides of the gate structure 13 ; the electrostatic discharge doped region 16 is located in the P-type well region 12 in the substrate 11 under the drain region 15 .
[0039] The electrostatic discharge doped region 16 is usually implanted with B or BF into the P-type well region 12 ...
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An electrostatic discharge protection structure and a forming method thereof are provided. The method for forming an electrostatic discharge protection structure includes forming a base including a substrate, a gate structure located on the substrate, and first and second doped region located in substrates on both sides of the gate structure, respectively; forming at least two doped epitaxial layers spaced apart in the substrate of the first doped region; forming a first plug electrically connected to the doped epitaxial layer and a second plug electrically connected to the second doped region. The drain of the ESD protection structure is formed by the first doped region and the at least two dope epitaxial layers, the gradient of the doping ion concentration of the drain of the ESD protection structure can be effectively increased, and the trigger voltage of the ESD protection can be lowered.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic discharge protection structure and a forming method thereof. Background technique [0002] In addition, as semiconductor process technology capabilities continue to improve, the size of semiconductor devices continues to shrink. The harm of Electrostatic Discharge (ESD) to semiconductor integrated circuits becomes more and more obvious. Moreover, with the widespread use of semiconductor chips, there are more and more factors that cause the semiconductor chips to be damaged by static electricity. According to statistics, 35% of products with integrated circuit failures are caused by electrostatic discharge problems. [0003] In order to improve the electrostatic discharge problem of semiconductor chips and reduce the occurrence of damage to semiconductor devices, in existing chip designs, electrostatic discharge (ESD, Electrostatic Discharge) protectio...
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IPC IPC(8): H01L27/02
CPCH01L27/0266
Inventor 赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP