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Flash memory apparatus and data reading method thereof

A data reading and storage technology, applied in static memory, read-only memory, information storage, etc., can solve data errors, reduce data reliability and other problems, and achieve the effect of improving efficiency

Inactive Publication Date: 2019-01-01
ASOLID TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the threshold voltage of the above-mentioned memory cells may change due to environmental factors and / or changes in the characteristics of the memory cells. As a result, errors may occur in the data read by the read operation and reduce the reliability of the data.

Method used

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  • Flash memory apparatus and data reading method thereof
  • Flash memory apparatus and data reading method thereof
  • Flash memory apparatus and data reading method thereof

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Embodiment Construction

[0030] Please refer to Figure 1A to Figure 1C , Figure 1A to Figure 1C A schematic diagram showing the operation of the data reading method of the flash memory according to the embodiment of the present invention. in, Figure 1A to Figure 1C In the diagram, the horizontal axis represents the threshold voltage. exist Figure 1A Among them, part of the storage cells of the flash memory are in the state of being erased, and the other part of the storage cells are in the state of being programmed, and respectively as Figure 1A The distribution area lines 102 and 101. Wherein, the threshold voltages of the erased memory cells are all lower than the read threshold R1, and the threshold voltages of the programmed memory cells are all greater than the read threshold R1.

[0031] When the flash memory is used for a period of time, the threshold voltage of the programmed memory cell may change, and as Figure 1B As shown, the distribution zone line 101 drifts in the direction of t...

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Abstract

A flash memory apparatus and a data reading method thereof are provided. The data reading method includes: setting a plurality of offset value tables, where the offset value tables respectively correspond to a plurality of timing information; comparing the timing information with a working period of a read area to select one of the offset value tables to be a selected offset value table when a reading failure even happened; adjusting a read threshold value according to at least one offset value in the selected offset value table to generate an adjusted read threshold value; and, operating a retry reading operation on the read area according to the adjusted read threshold value.

Description

technical field [0001] The invention relates to a flash memory device and a data reading method thereof, in particular to a flash memory and a data reading method thereof which can adjust a reading critical value according to the length of a working cycle. Background technique [0002] With the advancement of electronic technology, electronic devices have also become an indispensable tool in people's lives. In order to provide a large amount of data storage capacity, it becomes an inevitable trend to arrange a certain amount of non-volatile memory in the electronic device. Today, flash memory is a commonly used non-volatile memory. [0003] In the prior art, when data is read from a memory cell in a flash memory, a read threshold can be provided for comparison with the threshold voltage of the memory cell, so as to judge the read data logic level. However, the above-mentioned threshold voltage of the memory cell may change due to environmental factors and / or changes in th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26
CPCG11C16/26
Inventor 郑晶今吴家宏
Owner ASOLID TECH