A flip-chip structure light-emitting diode chip and its preparation method
A light-emitting diode and chip technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the reflectivity of Ag thin films, poor thermal stability and adhesion, and affecting the optical and electrical properties of LED devices. Quantum efficiency, the effect of uniform current spreading
Active Publication Date: 2020-04-10
WUHAN UNIV
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Problems solved by technology
However, due to the poor thermal stability and adhesion of Ag, serious clusters and other phenomena will appear during sputtering and annealing, which seriously affect the optical and electrical properties of LED devices.
Researchers usually use AgAl, AgCu alloys or insert a layer of high work function metal Ni between Ag and p-GaN to solve such problems. Due to the absorption of visible light by metal Ni, these methods inevitably reduce the thickness of Ag thin films. Reflectivity
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[0053] In order to make the present invention easier to understand, specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0054] figure 1 The preparation process of the flip-chip light-emitting diode chip according to the embodiment of the present invention includes the following steps:
[0055] S101: Epitaxially grow a low-temperature GaN nucleation layer, GaN buffer layer, n-type gallium nitride layer, superlattice stress release layer, multi-quantum well active layer, low-temperature p-type gallium nitride layer, p - AlGaN electron blocking layer, p-type gallium nitride layer to obtain epitaxial wafer. see figure 1 .
[0056] S102: cleaning the LED epitaxial wafer.
[0057] S103: Etching the epitaxial layer by etching technology until the n-type gallium nitride layer is exposed, and forming an n-type electrode hole array in the LED epitaxial layer. see image 3 , 4 .
[0058] S104: First sputte...
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Abstract
The invention relates to the technical field of light emitting diodes, and discloses a novel inverted light emitting diode chip and a preparation method thereof. A inverted LED chip consists of an epitaxial wafer, a step-shaped silver-based p-type electrode, a first l- SiO2 insulation layer, a DBR insulation layer, an intermediate metal layer, a second -SiO2 insulation layer, an n-type pad and a p-type pad. The step-shaped electrode structure is induced, A silver-based p-type electrode is composed of Ag metal reflective layer and TiW / Pt / TiW / Pt metal barrier layer, which can effectively improvethe ohmic contact characteristics and reflectivity of the silver film. The composite reflective layer composed of the first SiO2 insulating layer and DBR insulating layer completely encapsulates mostof the light-emitting surfaces of the chip, which can increase the average reflectivity to over 95% and the brightness of the LED is expected to be increased by about 1%. The invention reduces the light consumption and enhances the light emitting efficiency of the LED by the above method.
Description
technical field [0001] The invention relates to the technical field of semiconductor light-emitting devices, in particular to a flip-chip light-emitting diode chip and a preparation method thereof. Background technique [0002] As a new type of high-efficiency solid-state light source, light-emitting diodes (Light Emitting Diodes, referred to as "LED") are widely used in solid-state lighting, transportation, military and medical fields due to their high efficiency, long life, energy saving, environmental protection, and rich colors. . With the gradual maturity of LED technology and the needs of industrialization and marketization, there are stricter requirements on the luminous efficiency and other properties of LED devices. [0003] Due to the non-conductive nature of the sapphire substrate, the p-type and n-type electrodes of conventional front-mount LEDs are on the same side of the epitaxial layer, causing part of the light emitted from the p-GaN surface to be absorbed o...
Claims
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IPC IPC(8): H01L33/00H01L33/38H01L33/40
CPCH01L33/007H01L33/38H01L33/40
Inventor 刘胜周圣军徐浩浩刘星童
Owner WUHAN UNIV