A kind of flip-chip nano LED chip and preparation method thereof

A LED chip and nanotechnology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of ineffective independent electroluminescence, difficult to effectively control the position and size of nanopillars, and leakage, so as to improve light extraction efficiency and reliability , Uniform current expansion, and the effect of reducing leakage current
CN103560186BActive Publication Date: 2016-02-17PEKING UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
PEKING UNIV
Publication Date
2016-02-17

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Abstract

The invention discloses a nano LED flip chip and a manufacturing method thereof. The nano LED flip chip comprises an epitaxial chip part, a substrate and a flip-chip bonding part. The epitaxial chip part located on the substrate is arranged on the flip-chip bonding part in a back-off mode. The manufacturing method achieved from top to bottom is adopted, so that the size and the position of a single nano pillar is effectively controlled, nanoimprinting and electron beam lithography are combined, and a template is used repeatedly so as to facilitate mass production of chips; damage eliminating processing is carried out on the side wall of the nano pillar, so that damages of the side wall are restored, generation of leak currents is reduced, and the function of preventing short circuit is performed; a nano LED chip is combined with a flip-chip structure, so that a device has higher light extraction efficiency, a better heat dissipation effect and more uniform current expansion, and performance of the device is improved; by means of a discrete structure, independent electroluminescence of a single nano LED is achieved, and the current research situation that nano pillar arrays give out light together is changed.
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Description

technical field

[0001] The invention relates to flip-chip nano-column LEDs, in particular to a nano-LED chip prepared by a top-down method and a preparation method thereof. Background technique

[0002] Compared with large-size light-emitting diodes (LEDs), nanocolumn LEDs have many outstanding advantages, such as low dislocation density, and dislocation-free nanocolumn arrays can be obtained by growth methods. Through nanomasks, dry methods or The dislocation density of the wet-etched nanocolumn array will also be reduced by more than two orders of magnitude; the stress release will reduce the quantum confinement Stark effect and increase the radiative recombination effect of the quantum well; the injection efficiency will be improved, and the charge carriers will be transferred through a single nanocolumn. The transmission is limited in one-dimensional structure to obtain high quantum well injection efficiency; it can work with high efficiency under high injection current,...

Claims

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