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LED (light-emitting diode) of zinc-oxide based transparent electrode and manufacturing method thereof

A technology of light-emitting diodes and transparent electrodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex process and long time consumption, and achieve the effect of simple preparation process, low cost and uniform current diffusion

Active Publication Date: 2013-08-28
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The process is complex and time-consuming

Method used

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  • LED (light-emitting diode) of zinc-oxide based transparent electrode and manufacturing method thereof
  • LED (light-emitting diode) of zinc-oxide based transparent electrode and manufacturing method thereof
  • LED (light-emitting diode) of zinc-oxide based transparent electrode and manufacturing method thereof

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Embodiment 1

[0034] Embodiment one: see figure 1 , figure 2 , image 3 , Figure 4 , the zinc oxide-based transparent electrode light-emitting diode includes: sapphire substrate 1, buffer layer 2, intrinsic layer 3, n-type gallium nitride 4, quantum well 5, p-type gallium nitride 6, transparent electrode 7, n-type metal Electrode (PAD) 8, p-type metal electrode (PAD) 9. n-PAD is a Ti / Al or Cr / Pt / Au composite electrode, which is in the shape of a truncated cone on the opposite corner of the chip; p-PAD is a Ni / Au or Cr / Pt / Au composite electrode, which is in the shape of a small truncated cone or opposite Multi-crossing branches with diagonal distribution, or "I" shape with diagonal distribution. The transparent electrode is a zinc oxide-based transparent conductive film made of ZnO:Ga or ZnO:Al or ZnO:In;

Embodiment 2

[0035] Embodiment two: the manufacturing method of the zinc oxide-based transparent electrode light-emitting diode chip is as follows: first, buffer layer 2, intrinsic layer 3, n-type gallium nitride 4, quantum well 5, p-type Gallium nitride 6 and magnesium activation annealing treatment; secondly, use the photoresist as a pattern mask, and etch the epitaxial wafer by ICP dry etching method to expose the n-type gallium nitride; float the photoresist, Carry out pattern mask again, deposit zinc oxide transparent conductive thin film 7 by magnetron sputtering method; Again, deposit n-type metal electrode (PAD) 8 and p-type metal electrode (PAD) 9 by the method for thermal evaporation or electron beam evaporation ; Finally, carry out the alloying annealing treatment of the metal electrode and split the epitaxial wafer.

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Abstract

The invention relates to an LED (light-emitting diode) of a zinc-oxide based transparent electrode and a manufacturing method thereof. The LED comprises a sapphire substrate, a buffer layer, an intrinsic layer, n-type gallium nitride, a quantum well, p-type gallium nitride, a zinc-oxide based transparent current extending layer, an n-type metal electrode (PAD) and a p-type metal electrode (PAD), wherein the buffer layer, the intrinsic layer, the n-type gallium nitride, the quantum well and the p-type gallium nitride sequentially grow in MOCVD. The n-type gallium nitride is exposed through dryetching; the method of a photoresist masking film means that: a magnetic control sputtering method is utilized to deposit the zinc-oxide based transparent current extending layer, and then thin film deposition methods such as thermal evaporation or electronic beam evaporation and the like are utilized to grow the metal electrodes. A chip preparation process first carries out etching on the p-typegallium nitride and then carries out deposition on the zinc oxide transparent electrode, thereby overcoming the problem that different materials of zinc oxide and gallium nitride need respective etching. Moreover, as a zinc oxide electrode layer does not need etching, the processing time is saved, the production process is simplified, and the production efficiency is increased.

Description

technical field [0001] The invention relates to a zinc oxide-based transparent electrode light-emitting diode and a manufacturing method thereof. The invention reverses the conventional LED chip process, first etches the gallium nitride epitaxial layer, and then deposits a zinc oxide transparent conductive film by magnetron sputtering. Evaporation or electron beam evaporation deposits metal electrodes to prepare high-power LED chips. This process method overcomes the problem that different materials of zinc oxide and gallium nitride need to be etched separately. Moreover, since the zinc oxide electrode layer does not need to be etched, the process time is saved, the production process is simplified, and the production efficiency is improved. Background technique [0002] In recent years, the development of Group III nitrides represented by GaN has been extremely rapid, and it has become a new hotspot in the research and development of the semiconductor field. Compared with...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/42H01L33/38
Inventor 王书方张建华
Owner SHANGHAI UNIV
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