Coating mechanism and method for coating silicon chip with HMDS

Abstract

The invention provides a coating mechanism and a method for coating a silicon chip with HMDS. The coating mechanism comprises a coating channel mechanism, the coating channel mechanism comprises a central channel and a peripheral channel, the central channel is used for coating a central area of the silicon chip, and the peripheral channel is used for coating a peripheral area of the silicon chip;the central area of the silicon chip and the peripheral area of the silicon chip are coated through different steps, and in this way, the problem can be solved that the central area of the silicon chip is coated with HMDS gas repeatedly, and the peripheral area is incompletely coated; the time when HMDS diffuses from the central area to the peripheral area is also shortened to a certain extent, and accordingly the total of the process is shortened.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a coating mechanism and a method for coating HMDS on a silicon wafer. Background technique [0002] In the photolithography process, the adhesion of the photoresist on the silicon wafer directly determines the formation of key patterns. Poor photoresist adhesion will lead to serious defects such as peeling. It has been found that good adhesion requires a silicon wafer contact angle greater than 65 degrees In order to make the photoresist adhere to the silicon wafer meet the process requirements, the current photoresist coating machine uses gas phase hexamethyldisilamine (HMDS) to increase the contact angle of the silicon wafer so as to improve the adhesion between the photoresist and the silicon wafer, such as figure 1 shown. [0003] The basic factors affecting HMDS coating performance mainly include hardware design, HMDS batch, process temperature, pro...

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Problems solved by technology

[0004] At present, the photoresist coating machine has a mechanism for coating HMDS, such as figure 2 As shown, the function of this mechanism is to vaporize HMDS, and then combine the HMDS gas with the silicon wafer to improve the adhesion between the photoresist and the silicon wafer. Usually, this mechanism discharges the HMDS gas through the central single hole above the silicon wafer and coats it. On the silicon wafer, but in the specific process, it takes a long process time to ensure that the HMDS coating around the silicon wafer meets the requirements; if the process time is insufficient, the adhesion of the key pattern from the center to the edge after baking will be different, and it will be in Defects caused by pattern peeling occur in the subsequent process. The uniformity of HMDS formation is crucial to the adhesion of key patterns. The difference in the adhesion of key patterns is directly related to the formation of patterns and thus directly affects the yield of devices.

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