An all-n-type four-phase clock charge pump

A charge pump, four-phase technology, applied to instruments, conversion equipment without intermediate conversion to AC, static memory, etc., can solve the problems of lack of complementary P-type devices, four-phase clock charge pump can not be solved, etc., to solve the problem of voltage Problems of loss, improvement of voltage conversion efficiency, effect of improvement of boost efficiency

Active Publication Date: 2020-06-19
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In recent years, new oxide thin film transistor devices have become popular research objects due to their excellent performance and simple manufacturing process. However, the current oxide thin film transistors are N-type devices, and there is a problem of lack of complementary P-type devices. As a result, the four-phase clock charge pump composed of N-type tubes cannot solve the problem that the output stage adopts diode connection.

Method used

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  • An all-n-type four-phase clock charge pump
  • An all-n-type four-phase clock charge pump

Examples

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Embodiment

[0038] Such as figure 1 As shown, an all-N-type four-phase clock charge pump circuit based on thin film transistors is composed of a drive circuit and a control circuit, and the signal of the all-N-type four-phase clock charge pump includes a power input terminal vdd, four clock signal input terminals , a ground terminal and an output terminal out.

[0039] The drive circuit consists of a second transistor m2, a fourth transistor m4, a sixth transistor m6, an eighth transistor m8, a tenth transistor m10, a second capacitor c2, a fourth capacitor c4, a sixth capacitor c6, an eighth capacitor c8, The tenth capacitor c10 is formed. The drain of the second transistor m2 is connected to the power supply terminal VDD, the gate is connected to the drain of the first transistor m1 , and the source is connected to the drain of the fourth transistor m4 . The drain of the fourth transistor m4 is connected to the source of the second transistor m2, the gate is connected to the drain of ...

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Abstract

The invention discloses an all-N type four-phase clock charge pump, which comprises a driving circuit and a control circuit, wherein the driving circuit is used for completing step-by-step transfer and accumulation of charge and includes a second transistor, a fourth transistor, a sixth transistor, an eighth transistor, a tenth transistor, a second capacitor, a fourth capacitor, a sixth capacitor,an eighth capacitor and a tenth capacitor; and the control circuit is used for improving the charge transfer efficiency and includes a first transistor, a third transistor, a fifth transistor, a seventh transistor, a ninth transistor, an eleventh transistor, a first capacitor, a third capacitor, a fifth capacitor, a seventh capacitor, a ninth capacitor and an eleventh capacitor. The all-N type four-phase clock charge pump constructs a threshold eliminating structure of the four-phase clock charge pump through sampling output level voltage so as to achieve the purposes of eliminating the threshold loss and improving the output voltage.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to an all-N type four-phase clock charge pump. Background technique [0002] At this stage, charge pumps have been widely used in many analog circuits. In many applications, the charge pump requires high step-up or step-down efficiency, and the most popular charge pump is a four-phase clock charge pump. [0003] In recent years, new oxide thin film transistor devices have become popular research objects because of their excellent performance and simple manufacturing process. However, the current oxide thin film transistors are N-type devices, and there is a problem of lack of complementary P-type devices. As a result, the four-phase clock charge pump composed of N-type tubes cannot solve the problem that the output stage adopts the diode connection method. Contents of the invention [0004] The purpose of the present invention is to overcome the deficiencies of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/07G11C16/30G11C5/14
CPCG11C5/145G11C16/30H02M3/07
Inventor 占凡吴为敬刘玉荣
Owner SOUTH CHINA UNIV OF TECH
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