Air inlet device for atomic layer deposition technology and atomic layer deposition device

Abstract

The embodiment of the invention discloses an air inlet device for an atomic layer deposition technology and an atomic layer deposition device. The air inlet device comprises a first air inlet block and a second air inlet block, the first air inlet block is inserted into a second center air inlet through hole formed in the second air inlet block, a first annular sealing cavity area and a second annular sealing cavity area which are isolated from each other are formed between the inner wall of the second center air inlet through hole and the side wall of the first air inlet block, the side wallof the first air inlet block is provided with a first air inlet hole used for enabling the first sealing cavity area to communicate with a first center air inlet through hole and enabling the second sealing cavity area to communicate with the first center air inlet through hole, and the side wall of the second air inlet block is provided with a second air inlet hole which communicates with the first sealing cavity area and the second sealing cavity area. By means of the air inlet device and the atomic layer deposition device, the problem that two kinds of precursors are chemically reacted in the primary stage of the air inlet end due to mixing can be prevented, granules produced by the air inlet end in the atomic layer deposition technology can be effectively reduced, and a positive effectis achieved on technology stability.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an air intake device and an atomic layer deposition device for an atomic layer deposition process. Background technique [0002] Atomic layer deposition ALD (atomic layer deposition) technology is a method that can coat substances on the surface of a substrate layer by layer in the form of a single atomic film. The growth process is periodic, and a preparation cycle (Cycle) generally includes two Self-limiting reaction (Self-limit reaction). Under certain temperature conditions, the precursor molecules are adsorbed (mainly chemical adsorption) to form active agents (Species) on the substrate surface by introducing the first reaction precursor (Precursor) into the reaction chamber; the current precursor When the adsorption reaches a saturated state, the chemical adsorption reaction ends, realizing the self-limiting control of the reaction between the first pre...

AI Technical Summary

Problems solved by technology

The existing air intake device does not consider the isolation of the two precursors, and it is easy to retain the precursor in the previous cycle. After several cycles of accumulation, the two precursors will react in the air intake device to form deposits, thus forming Particles, leading to a series of problems such as the failure of the air intake device, the failure to achieve the initial uniform gas effect, and shortening the maintenance cycle

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