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WOLED backboard and preparation method thereof

A backplane and substrate technology, applied in the field of WOLED backplane and its preparation, can solve problems such as pixel light leakage, and achieve the effect of avoiding light leakage or color mixing

Inactive Publication Date: 2019-02-15
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] This application provides a WOLED backplane and its preparation method, which can solve the problem of light leakage from pixels

Method used

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  • WOLED backboard and preparation method thereof
  • WOLED backboard and preparation method thereof

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Embodiment Construction

[0034] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments that the present application can be used to implement. The directional terms mentioned in this application, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application. In the figures, structurally similar elements are denoted by the same reference numerals.

[0035] The present application aims at the technical problem of light leakage or color mixing between adjacent pixels in the WOLED backplane of the prior art, and this embodiment can solve this defect.

[0036] Such as figure 1 As shown, it is a flow chart of the preparation method of the WOLED backplane provided by the embodiment of the present application. combine F...

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Abstract

The invention provides a WOLED backboard and a preparation method thereof. The WOLED backboard comprises a substrate, a bottom-layer thin-film transistor layer, a color film, a flat layer, an anode and a pixel definition layer, wherein the bottom-layer thin-film transistor layer is prepared on the substrate; the color film is prepared on the bottom-layer thin-film transistor layer, and the color film comprises sub-color film units which are distributed at intervals; the flat layer is prepared on the color film, and is provided with a groove in interval position between the two adjacent sub-color film units; the anode is prepared on the flat layer corresponding to the sub-color film units; and the pixel definition layer is prepared at the position, corresponding to the groove, on the flat layer for defining a pixel region, wherein the pixel definition layer is made of a light absorption material.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a WOLED backplane and a preparation method thereof. Background technique [0002] As the resolution of the backplane continues to increase, the number of pixels and the spacing between sub-pixels continue to decrease. When the bottom-emission WOLED (COA) emits light, the light needs to pass through the flat layer and the R / G / B color film. Because the bottom-emission WOLED The flat layer is generally a high-transmittance organic material, and the multi-directionality of light propagation often causes pixels that do not need to emit light to emit light due to the emission of adjacent pixels, which is manifested as light leakage. [0003] Therefore, there are defects in the prior art, and improvement is badly needed. Contents of the invention [0004] The present application provides a WOLED backplane and a preparation method thereof, which can solve the problem of lig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32
CPCH10K59/122H10K59/1201
Inventor 唐甲任章淳
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD