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Multi-waveband full semi-conductor laser with indication light

A semiconductor and laser technology, applied in the field of laser applications, can solve the problems of long laser wavelength, indistinguishable by the human eye, and difficult to debug, and achieve the effect of small size, reduced debugging difficulty, and compact overall structure

Inactive Publication Date: 2019-02-19
中国电子科技集团公司第五十三研究所
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  • Abstract
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Problems solved by technology

However, short-wave infrared and medium-wave infrared semiconductor lasers have long laser wavelengths, which are indistinguishable by human eyes and difficult to debug

Method used

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  • Multi-waveband full semi-conductor laser with indication light

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Embodiment Construction

[0020] The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0021] The invention provides a multi-band all-semiconductor laser with indicator light,

[0022] Including medium-wave infrared semiconductor laser 1, medium-wave infrared laser collimator, medium-wave beam combiner 9, short-wave infrared semiconductor laser 3, short-wave infrared laser collimator, short-wave beam combiner 8, indicator light semiconductor laser 5, indicator light Collimator 6, visible light reflector 7, housing 10 and laser window 11;

[0023] Among them, medium-wave infrared semiconductor laser 1, medium-wave infrared laser collimator, medium-wave beam combiner 9, short-wave infrared semiconductor laser 3, short-wave infrared laser collimator, short-wave beam combiner 8, indicating light semiconductor laser 5, indicating Both the light collimator 6 and the visible light reflector 7 are placed in the housing 10 .

[0024] The medium-wav...

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Abstract

The invention discloses a multi-waveband full semi-conductor laser with indication light. The multi-waveband full semi-conductor laser with the indication light comprises a medium wave infrared semi-conductor laser, a medium wave infrared laser collimator, a medium wave beam combiner, a short wave infrared semi-conductor laser, a short wave infrared laser collimator, a short wave beam combiner, anindication light semi-conductor laser, an indication light collimator and a visible light reflector. The medium wave infrared laser collimator and the medium wave beam combiner are successively positioned in a light path of emergent light of the medium wave infrared semi-conductor laser. The short wave beam combiner and the short wave infrared laser collimator are successively positioned in a light path of emergent light of the short wave infrared semi-conductor laser. The indication light collimator and the visible light reflector are successively positioned in a light path of emergent lightof the indication light semi-conductor laser. Indication light reflected by the visible light reflector successively penetrates through the medium wave beam combiner and the short wave beam combiner,and is coaxially output after beam-combined with a medium wave infrared laser and a short wave infrared laser. The multi-waveband full semi-conductor laser with the indication light is capable of using visible light as the indication light, and enabling a multi-waveband laser to be coaxially emitted.

Description

technical field [0001] The invention belongs to the technical field of laser applications, and in particular relates to a multi-band all-semiconductor laser with indicator light. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, direct modulation, high electro-optical conversion efficiency, and high reliability. Lasers made of semiconductor materials have covered the visible to terahertz bands. In particular, short-wave infrared and medium-wave infrared semiconductor lasers have important applications in the field of national defense. [0003] Beam combining can be roughly divided into the following four categories. The first is parallel beam combining. The array of combined light sources can have the same or different wavelengths, and there is no control over the spectrum and phase of the laser output from the device. The brightness of the beam synthesized in this way will not be enlarged proportionally; the second type i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40H01S5/00
CPCH01S5/005H01S5/4012
Inventor 李森森吴凡安朝卫周冠军蔡军闫秀生
Owner 中国电子科技集团公司第五十三研究所
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