Ge-Si Heterojunction Bipolar Transistor Detector Based on Direct Antenna Matching

Abstract

The present invention provides a Ge-Si heterojunction bipolar transistor detector based on antenna direct matching. The detector comprises a first Ge-Si heterojunction bipolar transistor and a secondGe-Si heterojunction bipolar transistor, the bases of the first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor are connected with an antenna, emitting electrodes of the first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor are earthed, a collector of the first Ge-Si heterojunction bipolar transistor is connected with an output end through a first quarter-wave microstrip line, a collector of the second Ge-Si heterojunction bipolar transistor is connected with the output end through a second quarter-wave microstrip line, a capacitor is connected between the base of the first Ge-Si heterojunction bipolar transistor and the collector of the second Ge-Si heterojunction bipolar transistor, the capacitor is connected between the base of the second Ge-Si heterojunction bipolar transistor and the collector of the first Ge-Si heterojunction bipolar transistor, and the direct current offset line in theantenna is connected with a direct current bias voltage. The output response of the detector is increased.

Description

technical field [0001] The invention relates to a transistor detector. In particular, it relates to a germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching. Background technique [0002] Terahertz waves have many unique characteristics: the penetrating properties of terahertz waves make them suitable for security inspection imaging[1]; The imaging of the universe has drawn a more detailed picture for people[2]; the terahertz wave has the same frequency as the vibration of many biological macromolecules, which has opened up a new way for biomedical detection[3][4]; the terahertz wave can provide Greater bandwidth provides the possibility for future high-speed wireless communication. At present, terahertz detectors based on field-effect transistor structures are proposed in China, but under the same process, the characteristic frequency and cut-off frequency of field-effect transistors are much smaller than that of germanium-silicon he...

AI Technical Summary

Problems solved by technology

[0003] The technical problems faced by terahertz detectors are: the signal power transmission efficiency between the terahertz wave antenna and the silicon-germanium heterojunction bipolar transistor is low; the leakage of the terahertz wave to the output terminal will greatly reduce The output responsivity of the detector increases the equivalent noise power of the detector

Images