Semiconductor structure and forming method thereof

Abstract

Semiconductor structures including active fin structures, dummy fin structures, epitaxy layers, a Ge containing oxide layer and methods of manufacture thereof are described. By implementing the Ge containing oxide layer on the surface of the epitaxy layers formed on the source / drain regions of some of the FinFET devices, a self-aligned epitaxy process is enabled. By implementing dummy fin structures and a self-aligned etch, both the epitaxy layers and metal gate structures from adjacent FinFET devices are isolated in a self-aligned manner.

Description

technical field [0001] The present disclosure relates to a fin field effect transistor device structure and its forming method. Background technique [0002] The manufacture of semiconductor components becomes increasingly difficult as their dimensions shrink. One of the challenges in fabricating these devices is precisely lithographically patterning these structures from different layers. For example, shrinking device pitches make patterning and aligning structures between adjacent FinFETs more challenging. Exemplary challenges include growing epitaxial layers on the source / drain regions of adjacent FinFETs without fusion with epitaxial layers on different fins, and patterning gate electrodes on adjacent FinFETs in juxtaposition. Contents of the invention [0003] According to some embodiments of the present disclosure, a semiconductor device structure is proposed, including a substrate, a first fin structure, a second fin structure, a first epitaxial layer, a second ep...

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Problems solved by technology

Exemplary challenges include growing epitaxial layers on source / drain regions of adjacent FinFETs without fusion with epitaxial layers on different fins, and patterning gate electrodes on adjacent FinFETs in juxtaposition

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