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All-aluminum transparent grid thin film transistor and preparation method thereof

A technology of thin film transistors and transparent gates, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of resource scarcity and high cost, and achieve the effect of low manufacturing cost

Inactive Publication Date: 2019-03-08
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Ag is a precious metal, its resource is scarce and its cost is high

Method used

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  • All-aluminum transparent grid thin film transistor and preparation method thereof
  • All-aluminum transparent grid thin film transistor and preparation method thereof
  • All-aluminum transparent grid thin film transistor and preparation method thereof

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Embodiment 1

[0035] An all-aluminum transparent gate thin-film transistor prepared in this embodiment, the schematic diagram of its stacked structure is shown in figure 1 01 is glass substrate, 02 is AZO / Al / AZO / Al / AZO stack gate, 02-1 is AZO thin film, 02-2 is Al thin film, 03 is Al 2 o 3 Gate insulating layer, 04 is IGZO semiconductor layer, 05 is Al 2 o 3 Semiconductor modification layer, 06 is Al source and drain electrodes.

[0036] The preparation method of the all-aluminum transparent gate thin film transistor described in this embodiment is as follows:

[0037] (1) Clean the glass substrate with deionized water and isopropanol by ultrasonic vibration for 10 minutes, then put the cleaned glass substrate into an oven, and dry it at 80°C;

[0038](2) AZO / Al / AZO / Al / AZO stacked gates are sequentially deposited on the glass substrate. The thickness of each AZO layer is 20nm, and the thickness of each Al layer is 5nm. Among them, the AZO layer in the stacked gate adopts radio frequency...

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Abstract

The invention belongs to the technical field of thin film transistors in the display field and discloses an all-aluminum transparent grid thin film transistor and a preparation method thereof. The all-aluminum transparent grid thin film transistor is composed of a glass substrate, a stacked grid electrode, an Al2O3 grid insulating layer, an IGZO semiconductor layer, an Al2O3 semiconductor modification layer and an Al source drain electrode, which are sequentially laminated; and the stacked grid electrode is sequentially provided with five layers of stacked structures of AZO / Al / AZO / Al / AZO frominside to outside. The AZO / Al / AZO / Al / AZO stacked grid thin film is prepared at room temperature and has the advantages of high transparency, high conductivity and the like; and the stacked grid material is safe and non-toxic, low in preparation cost and capable of being prepared in a large area, and can be widely applied to transparent TFTs and other transparent electronic devices.

Description

technical field [0001] The invention belongs to the technical field of thin film transistors in the display field, and in particular relates to an all-aluminum transparent gate thin film transistor and a preparation method thereof. Background technique [0002] At present, the main difficulties in applying pure AZO materials prepared at room temperature to the gate of TFT devices are the high resistivity of the AZO gate material and the interface between the transparent gate and the gate insulating layer. [0003] There are existing technologies to solve the above problems: [0004] (1) Use ITO electrode as transparent gate, ITO has low resistivity and good interface with insulating layer (Yu W, HanD, Dong J, et al.AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer[J].IEEE Transactions on Electron Devices,2017,64(5):2228-2232; Rembert T, Battaglia C, Anders A, et al.Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/49H01L29/786H01L21/443H01L21/34
CPCH01L21/443H01L29/42372H01L29/42384H01L29/4908H01L29/66969H01L29/7869
Inventor 姚日晖章红科宁洪龙李晓庆张啸尘邓宇熹邓培淼周尚雄袁炜健彭俊彪
Owner SOUTH CHINA UNIV OF TECH