Unlock instant, AI-driven research and patent intelligence for your innovation.

System and method for electronic die inking after automatic visual defect inspection

A bare-die, defect-prone technology used in the field of defect inspection of semiconductor wafers to address issues prone to variation and errors

Pending Publication Date: 2019-04-02
TEXAS INSTR INC
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The manual multi-level guardband setup process is time intensive and prone to variation and error

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method for electronic die inking after automatic visual defect inspection
  • System and method for electronic die inking after automatic visual defect inspection
  • System and method for electronic die inking after automatic visual defect inspection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In the drawings, like drawing references indicate similar elements. When a particular feature, structure or characteristic is described in conjunction with an embodiment, it can also be implemented in conjunction with other embodiments whether explicitly described or not. In this specification, the term "couple / couples" means an indirect or direct electrical connection, unless qualified as "communicatively coupled" (which may include a wireless connection). Thus, if a first device couples to a second device, that connection may be through a direct electrical connection, or through an indirect electrical connection via other devices and connections.

[0022] figure 1 An example wafer defect map 100 created by an AVI system is shown. In one embodiment, wafer defect map 100 is derived from a KLA results file (KLARF), although other file types may be used. The wafer defect map 100 includes a map of a wafer 102 with specific subdivisions 104 indicated and the location of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In a method (1000A) of providing a semiconductor device and a computer-readable medium having instructions for performing the method, the method (1000A) includes receiving (1005) a first wafer defectmap that defines comparison regions and identifies visual defect locations for a wafer. A format of the comparison regions is determined (1010), with the format chosen from a group including die-to-die, partial-shot-to-partial-shot and full-shot-to-full-shot. If the comparison format is not die-to-die (1015), mapping information is received (1020) that provides die locations within the comparisonregions. A wafer layout map is provided (1025) that identifies die locations within the wafer.

Description

technical field [0001] The present invention relates generally to defect inspection of semiconductor wafers, and more particularly to systems and methods for electronic die inking following automated visual defect inspection. Background technique [0002] The fabrication of semiconductor integrated circuits (ICs) is an extremely complex process involving hundreds or more operations. ICs are manufactured by selectively implanting impurities onto a semiconductor substrate and applying conductive and insulating layers to the semiconductor substrate. Semiconductor ICs (die) are not manufactured individually, but as a collection of what can be hundreds or more die on a wafer, which is then diced to produce individual die. [0003] Due to the various defects that can occur during wafer fabrication, a large number of dies must be discarded for one reason or another. Defects are often caused by foreign particles, micro-scratches and other imperfections introduced during the photor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/66G01N21/88
CPCG01N21/9501H01L22/24H01L22/12G06T7/001G06T2207/30148G06T7/70G06T7/0004
Inventor E·R·特鲁巴尔B·W·帕克特V·C·赛莫克M·J·詹森D·M·库伦J·E·巴顿C·D·戈登
Owner TEXAS INSTR INC