Performance test device based on antiferroelectric material

Abstract

The invention discloses a performance test device based on an anti-ferroelectric material. The performance test device comprises a signal frequency collection circuit, a wave detection calibration circuit and a wave filtering compensation circuit, wherein the signal frequency collection circuit uses a signal frequency collector J1 with the model of SJ-ADC for collecting data signal frequency received by a control terminal in the performance test device based on the anti-ferroelectric material; the wave detection calibration circuit is divided into two paths to receive signals output by the signal frequency collection circuit; a first path uses a capacitor C2 to filter away noise of low-frequency signals; a second path uses a triode Q2 and a capacitor C3 to filter away noise in high-frequency signals; finally the first path of signals and the second path of signals are input into the in-phase input end of an operation amplifier AR3; the wave filtering compensation circuit uses an inductor L2, a resistor R17, the capacitor C7 and a capacitor C8 for forming a wave filtering circuit to filter away noise waves in output signals; then, output is performed; the signals can be subjected tofrequency modulation and voltage stabilization in real time by using data signal frequency received by the control terminal in the performance test device based on the anti-ferroelectric material; and the signal distortion is prevented.

Description

Technical field [0001] The present invention relates to the field of circuit technology, in particular to a performance testing device based on antiferroelectric materials. Background technique [0002] Due to its special polarization mode, antiferroelectrics have a unique electric field induced phase transition. Antiferroelectric materials are always accompanied by significant polarization, volume and current in the process of antiferroelectric-ferroelectric phase transition. Therefore, it is expected to be applied in the fields of high-energy storage, micro-displacement control, and adjustable pyroelectric infrared detection. Therefore, the performance test of anti-ferroelectric materials is relatively strict, and the polarization intensity in the process of anti-ferroelectric-ferroelectric phase change , Volume and current changes are diverse, and with the generation of current, a magnetic field will appear, affecting the collected information, and will cause frequency hopping...

AI Technical Summary

Problems solved by technology

[0002] Due to its special polarization mode, antiferroelectrics have a unique electric field-induced phase transition, and antiferroelectric materials are always accompanied by significant changes in polarization, volume, and current during the antiferroelectric-ferroelectric phase transition process. Therefore, it is expected to be applied in the fields of high-energy storage, micro-displacement control, and adjustable pyroelectric infrared detection. Therefore, the performance test of antiferroelectric materials is relatively strict, and the polarization strength in the process of antiferroelectric-ferroelectric phase transition , volume and current changes are diverse, and with the generation of current, a magnetic field will appear, which will affect the collected information, and will cause frequency hopping to occur when the collected data signal is input to the performance test device based on antiferroelectric materials. and attenuation, seriously affecting the performance of the performance test device based on antiferroelectric materials

Images