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Method for forming vias and method for forming contacts in vias

A technology of organic layer and liquid layer, applied in the field of exposure and development steps, can solve problems such as glare effect and photomask defects

Active Publication Date: 2019-04-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Photomask defects and glare can occur when positive-tone developers are used to develop positive-tone photoresists to pattern contacts

Method used

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  • Method for forming vias and method for forming contacts in vias
  • Method for forming vias and method for forming contacts in vias
  • Method for forming vias and method for forming contacts in vias

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Embodiment Construction

[0050] The following disclosure provides many different embodiments or examples for implementing different configurations of the invention. The following examples of specific components and arrangements are intended to simplify the present invention and not to limit the present invention. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, multiple examples of the present invention may use repeated numbers and / or symbols to simplify and clarify the description, but these repetitions do not mean that elements with the same numbers in the various embodiments have the same corresponding relationship.

[0051] In addition, spatial relative terms such as "beneath", "beneath", "below", "above", "above", or similar terms may be used to simplify the relationship between one element and another element...

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Abstract

A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developingthe exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a semiconductor structure, in particular to the steps of exposure and development. Background technique [0002] In semiconductor structures, contacts may be formed in openings or vias in a dielectric layer that electrically connect contacts above and / or below the dielectric layer to implement different layers (such as metal layers in integrated circuits). internal connections between. As the critical dimensions in integrated circuits get smaller, the junction sizes also get smaller. When a positive-tone developer is used to develop a positive-tone photoresist to form a pattern of contacts, photomask defects and glare effects may occur. Contents of the invention [0003] A method for forming an opening in a lower layer provided by an embodiment of the present invention includes: forming a photoresist layer on the lower layer on a substrate; exposing the photoresist layer; developin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCH01L21/0274H01L21/0272H01L21/76816H01L21/76802H01L21/76877H01L21/0332
Inventor 林子扬吴承翰张庆裕林进祥
Owner TAIWAN SEMICON MFG CO LTD
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