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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor performance of semiconductor devices, and achieve the effects of avoiding damage, good shape and easy process

Active Publication Date: 2022-03-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of semiconductor devices composed of MOS transistors formed in the prior art is poor

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Embodiment Construction

[0030] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.

[0031] A method for forming a semiconductor device, comprising: providing a semiconductor substrate with several fins on the semiconductor substrate; forming a dielectric layer on the semiconductor substrate and the fins, wherein the dielectric layer has a penetrating dielectric layer and is located on the fins gate opening; form a metal gate structure across the fin in the gate opening; form via holes in the dielectric layer on both sides of the metal gate structure; form depressions in the fins at the bottom of the via holes; epitaxial in the depressions Source and drain doped layers.

[0032] However, the performance of the semiconductor device formed by the above-mentioned method is relatively poor. After research, it is found that the reasons are:

[0033] The source-drain doping layer is formed after the metal gate structure is formed, so as to avoid the perform...

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Abstract

A semiconductor device and a method for forming the same, wherein the method includes: providing a semiconductor substrate with a fin; And the gate opening on the fin; forming a gate structure across the fin in the gate opening; removing the sacrificial dielectric layer after forming the gate structure; removing the sacrificial dielectric layer, A source-drain doped layer is formed. The method improves the performance of the semiconductor device and reduces the process difficulty.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate; a source region located in the semiconductor substrate on one side of the gate structure; and a drain region located in the semiconductor substrate on the other side of the gate structure. [0003] The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current in the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0004] However, the performance of semiconductor devices formed by MOS transistors formed in the prior art is relatively poor. Contents of the invention [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/10H01L29/78H01L21/336
CPCH01L29/1033H01L29/66545H01L29/785
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP